Archive for the ‘Material’ Category
Monday, July 25th, 2011
Innovalight specialty PV materials company gets acquired by DuPont after successful integration of its silicon-ink screen-printed selective emitter (SE) into mulitple customer crystalline-silicon production lines.
Innovalight Acquired by DuPont for PV Play
Tags: c-Si, deposition, double-print, DuPont, efficiency, fab, HVM, ink, Innovalight, integration, JA Solar, materials, Motech, MRS, POCl, PV, screen print, SE, selective emitter, silicon-ink, Yingli
Posted in fab, Material, Product, PV, Service | Comments Off on Innovalight Acquired by DuPont for PV Play
Tuesday, April 5th, 2011
Prof. Masato Shibuya was awarded the JSAP Takuma Award 2011 for invention of the phase-shift mask (PSM) and opening the field of advanced lithography, as reported by independent PSM inventor Marc Levenson.
JSAP 2011 Takuma Award to Masato Shibuya
Tags: Advanced Lithography, fab, IC, JSAP, Levenson, litho, mask, OAI, OPC, PSM, RET, Shibuya, SMO, SRAF, Takuma
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on JSAP 2011 Takuma Award to Masato Shibuya
Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Advanced Lithography is All about Materials
Friday, January 7th, 2011
IEDM 2010 showed evolutions of NAND Flash with ALD IPD and ECC to 1Xnm node processing, and embedded-DRAM (eDRAM) capacitor stacks in porous low-k, meaning mainstream memory technologies will continue to dominate commercial volumes.
NAND Flash and DRAM evolutions
Tags: 12nm, 16nm, 22nm, 25nm, 2Xnm, 32nm, 3Xnm, ALD, COB, Cu, DRAM, eDRAM, Flash, HfO2, IC, IEDM, Intel, Micron, MLC, MPS, NAND, PCM, Renesas, ReRAM, Samsung, SARP, W
Posted in Equipment, fab, IC, Material, Product | Comments Off on NAND Flash and DRAM evolutions
Tuesday, December 21st, 2010
Graphene—the 2D hexagonal lattice of carbon—has been under investigation as a new material for electronics applications due to it’s high mobility and other unique properties. At IEDM this year, an entire session (#23) was devoted to showcasing graphene devices, and to sharing the latest processing tricks to grow and (sometimes) transfer the single-atomic-layer of carbon […]
Graphene devices and processing shown at IEDM
Tags: analog, analogue, backgate, bandgap, gate, GeorgiaTech, GFET, graphene, HfO2, HK, IBM, IC, IEDM, MIT, mixed-signal, mobility, RF, SAIT, SiC, THz
Posted in Equipment, fab, IC, Material, Product | Comments Off on Graphene devices and processing shown at IEDM
Tuesday, December 14th, 2010
Through-silicon vias (TSV) by IBM and Semtech for ADC/DSP solutions use copper and deep-trench capacitors for RF applications; IEDM 2010 papers show TSV in active chips progressing slowly.
TSV interposers by IBM/Semtech for ADC/DSP
Tags: 65nm, 90nm, ADC/DSP, CEA-Leti, Cu, FPGA, IBM, IC, interposer, MLM, Semtech, Si, TSMC, TSV, W
Posted in fab, IC, Material, Product, Service | Comments Off on TSV interposers by IBM/Semtech for ADC/DSP
Friday, November 26th, 2010
Qcept Technologies’ ChemitriQ5000 may help GlobalFoundries vs. TSMC in gate-first HKMG integration for 32nm foundry customers with fab metrology for control of yield excursions
Qcept may help GloFo vs. TSMC
Tags: 32nm, CMOS, fab, GF, GL, HKMG, IC, IEEE, metal, metrology, NVD, PMOS, poly, RMG, SiON, yield
Posted in Equipment, fab, IC, Material, Product | Comments Off on Qcept may help GloFo vs. TSMC
Monday, October 18th, 2010
IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.
IEDM to show 22nm alt-channels and dual- and tri-gates
Tags: 22nm, analog, CEA/Leti, CMOS, dual-gate, FDSOI, finFET, graphene, IC, IEDM, Infineon, Intel, memory, MEMS, Mittal, ReRAM, RF, SOI, transistor, tri-gate, TSMC
Posted in fab, IC, Material, MEMS, Product, Service | Comments Off on IEDM to show 22nm alt-channels and dual- and tri-gates
Tuesday, October 5th, 2010
Direct-write, maskless, lithography using e-beams is not ready for 22nm node IC manufacturing, and the SPIE BACUS presentations show EbDW issues include data transfer and inspection.
Maskless lithography not ready for 22nm
Tags: 22nm, BACUS, DUV, EbDW, IC, litho, lithography, MAPPER, mask, R&D, REBL, SPIE
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on Maskless lithography not ready for 22nm
Thursday, September 23rd, 2010
TSV for 3D integration of heterogeneous ICs used in interposers first, as shown at SEMICON/West, IMAPS, IEDM and companies like ASE, Alchimer, Suss, EVG, Novellus, Vertical Circuits, and IBM.
TSV ready in interposers at OTAPs
Tags: 3D, ASE, Cu, ECD, etch, IC, IEDM, IMAPS, Novellus, OTAP, PVD, Qualcomm, TSV
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on TSV ready in interposers at OTAPs