Archive for the ‘Material’ Category
Wednesday, February 25th, 2009
Applied Materials’ Technical Symposium at SPIE 2009 featured a panel discussion on next generation lithography (NGL) that was moderated by the company’s Ken MacWIlliams. The outstanding panelists were C. Grant Willson (UT-Austin), Burn Lin (TSMC), Jongwook Kye (AMD), Steve Radigan (Sandisk), and Milind Weling (Cadence). As would be expected from this panel, EUV steppers were […]
IC next-generation litho needs all possible tricks
Tags: DP, EbDR, i193, litho, NIL, stepper
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Thursday, February 19th, 2009
JSR announced today that it has entered into several joint development partnerships (JDP) with IBM to develop low-k dielectrics for 32nm and 22nm nodes of semiconductor technology. The companies will work on next generation materials JSR has had in development and commercial production, including low-k dielectrics and a broad range of photoresists. “This larger scale […]
JSR and IBM low-k JDPs for 32/22nm
Tags: 32nm, Cu, CVD, IC, litho, low-k, porous, resist, spin-on, ULK
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Wednesday, February 18th, 2009
For thick plating applications like copper pillar bump processing in semiconductor advanced packaging, Shin-Etsu MicroSi has introduced a positive tone, ultra-thick photoresist, SIPR-7126. The 7100 chemically amplified (CA) series has been in production for several years, and the SIPR-7126 has been optimized to reduce processing steps and improve removability in layers up to 100 µm […]
Shin-Etsu positive i-line resist 100 microns thick
Tags: bump, CA, i-line, IC, litho, resist, TMAH, TSV
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Friday, February 13th, 2009
Evident Technologies has announced the issuance of US Patent No. 7,482,059 covering the ability to synthesize a quantum dot with a metal layer which dramatically enhances the brightness and stability of a semiconductor nanocrystal complex. This advance of semiconductor materials science relies on a relatively low-cost colloidal formation processing, instead of needing epitaxial lattice-matching or […]
Evident quantum dot fab IP
Tags: CIGS, dot, IC, III-V, IP, LED, patent, quantum
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Tuesday, February 10th, 2009
CMP applications experts gathered in Santa Clara, California on February 10th to share their experience and expertise at the fifth annual seminar sponsored by Levitronix. Leading developers, manufacturers, and end-users of CMP discussed all aspects of the technology, and since Levitronix makes magnetic levitation (MagLev) pumps there were many thorough presentations on slurry distribution issues. […]
Levitronix seminar shows how to do CMP
Tags: analysis, CMP, fab, IC, metrology, slurry, yield
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Friday, February 6th, 2009
The SEMI PV Group today announced the release of its Global Photovoltaic (PV) Standards Roadmap Guidance Document, which identifies immediate opportunities for reducing cost and accelerating innovation in thin-film and crystalline silicon cell and module manufacturing through industry standards. This new roadmap confirms that major manufacturing cost savings are possible through standardizing wafer carriers and […]
SEMI PV standards roadmapped
Tags: cost, fab, management, PV, Si, solar, standards, thin-film
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Thursday, January 29th, 2009
Aixtron and Ovonyx announced a JDP for Atomic Vapor Deposition (AVD®) process technology to push scaling of next-generation phase change memory (PCM) products. Since it is expected to replace current high-density memory, PCM cells must be made dense and so companies like Samsung (Ref: BetaSights Newsletter 0001) and Numonyx require CVD-like processes for gap-fill instead […]
Aixtron and Ovonyx partner for PCM deposition
Tags: ALD, chamber, CVD, memory, PCM, precursor, PVD, Si, vapor
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Friday, January 23rd, 2009
Researchers from Sungkyunkwan University (SKKU) in Korea have found that large graphene films can be formed using CVD over a Ni thin film. The graphene is both strong and stretchy, and at low temperatures the monolayers transferred to SiO2 substrates show electron mobility >3,700 cm2/Vs implying that the quality is as high as mechanically-cleaved graphene. […]
Graphene dreams may be real at SKKU
Tags: CVD, electron, film, graphene, IC, mobility, monolayer
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Friday, January 16th, 2009
At SEMI’s SMC yesterday, Sung Wook Park, executive vice president and general manager of Hynix Semiconductor, provided a keynote address on the materials needs for mainstream memory chips over the next decade. DRAMs will likely turn into STTRAMs, and NAND Flash will probably be replaced by ReRAM (Ref: Ed’s Threads 080505). Combinatorial materials R&D company […]
Hynix sees STTRAM and ReRAM some day
Tags: DRAM, Flash, materials, memory, MTJ, NAND, PCM, R&D, RAM, ReRAM, SMC, STT, TMR
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Thursday, January 15th, 2009
As SEMI’s SMC today, Raymond Roberge, SVP and CTO of Praxair Electronics, proposed a pragmatic new collaboration model for electronic materials R&D. Semiconductor fab process materials TAM for 2008 was ~$10B, yet materials suppliers now question their ongoing profitability. “Certainly the 300mm shift has resulted in productivity advances for IDMs at the expense of materials […]
Praxair’s materials R&D collaboration model
Tags: 300mm, ALD, CMP, electronic, fab, IC, IDM, materials, OEM, R&D, SMC, supplier
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