Archive for the ‘fab’ Category
Friday, January 22nd, 2010
The IEEE’s International Electron Devices Meeting (IEDM) is still the place to see the latest micro- and nano-electronics research targeting commercial markets. On December 8, 2009, French researchers from Leti/Minatec showed “3D sequential CMOS integration” as <600°C processing of PFETs using a (110) orientation FDSOI layer that was transferred on top of NFETs made using […]
Leti shows 3D IC PFETs over NFETs
Tags: 22nm, 3D, dual-gate, epitaxy, FDSOI, FET, finFET, HfO2, HK, IC, NiSi, R&D, RSD, selective epi, SiGe, SPE, stack, TSV
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Tuesday, December 1st, 2009
Based on proven hardware sub-systems from previous models, Applied Materials has released a new chemical-mechanical planarization (CMP) tool that processes two 300mm diameter wafers simultaneously on each of two plattens. Initially targeting copper interconnect formation for memory ICs, the Reflexion GT tool has passed betasite tests at multiple customers, and reportedly provides 60% higher throughput […]
Applied Materials CMP tool dances the two-step
Tags: 4Xnm, CMP, cost, Cu, DRAM, fab, IC, OEM, slurry, tool, W
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Friday, November 13th, 2009
Intermolecular, the company that brought combinatorial chemistry to semiconductor manufacturing R&D, has expanded its focus to look at ways to improve basic manufacturing processes for photovoltaic (PV) fabs. “I think that the PV devices of 10 years from now will look significantly different from those of today,” said Intermolecular vice president and general manager of […]
Intermolecular’s PV R&D and Caltech/Dow’s PV plan
Tags: a-Si, CdTe, CIGS, mc-Si, PV, R&D, thin-film
Posted in Equipment, fab, FPD, Material, Product, PV, Service | Comments Off on Intermolecular’s PV R&D and Caltech/Dow’s PV plan
Thursday, October 22nd, 2009
If EUV lithography is to succeed, infrastructure gaps will need to be addressed forthwith. The lack of inspection tools for EUV masks and substrates constitutes one such gap, now recognized as a priority by SEMATECH. At the OSA/APS Frontiers in Optics (FiO) meeting held in San Jose, October 11-15, Carmen Menoni of Colorado State University […]
EUV mask inspection advances
Tags: 22nm, 32nm, actinic, EUV, IC, inspection, litho, mask
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Friday, October 9th, 2009
Founded in 1984 with Flemish government support, IMEC has reached 25 years. To celebrate the organization’s accomplishments, BetaSights joined other industry media outlets attending a research review event in beautiful Leuven, Belgium. From 1999 to 2009 has been the “phase of international breakthrough” as described by current president Luc Van den hove. Working with OEMs […]
IMEC betas for TSMC HVM
Tags: 193nm, 22nm, 300mm, 32nm, beta, EUV, finFET, Flash, HB-LED, IC, logic, MEMS, PV, SiGe, TANOS
Posted in Equipment, fab, IC, Material, MEMS, Product, PV, Service | Comments Off on IMEC betas for TSMC HVM
Sunday, October 4th, 2009
KLA-Tencor recently announced its long awaited 193nm reticle defect inspection tool, the Teron 600. Wafer scanners adopted 193nm exposure wavelength years ago in order to shrink circuit features below the resolution limit set by the previous (248nm) wavelength, roughly 130nm. The photomasks used in those tools, however, continued to be inspected at 257nm, in spite […]
New 193nm mask inspection tool
Tags: 193nm, 22nm, 32nm, EUV, IC, inspection, litho, mask, reticle, SMO
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Friday, September 18th, 2009
At SEMICON West this year, ASML announced tools that fleshed out their Holistic Lithography scheme introduced at SPIE’s Advanced Lithography Symposium in February of this year. The key idea of Holistic Lithography, according to Bert Koek, senior vice president of the applications products group at ASML, is integrating computational lithography, wafer printing, and process control […]
Lithography going holistic
Tags: 22nm, 32nm, computational, i193, IC, litho, OPC, SMO
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Wednesday, September 9th, 2009
After more than 5 years and US$500 million dollars invested, Nanosolar has emerged from secrecy to quell rumors that the company’s technology was all smoke and nanomirrors. This long-shot technology risk is now claimed to produce mean cell efficiencies of 11%, with a champion cell from a Gen3 line measured by NREL at 16%. The […]
Nanosolar uncloaks 11% R2R CIGS
Tags: cell, CIGS, deposition, PV, RTP, thin-film
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Wednesday, August 26th, 2009
IMEC/F-IZM/SUSS/TM vs. SEMATECH/Leti/EVG/Brewer. The leading R&D consortia have aligned (pun intended) with leading equipment and materials suppliers to create ultra-thin silicon wafer handling technologies for 3D ICs. With the ability to shrink circuit dimensions in 2D becoming ever more difficult, most of the world’s IC fab leaders are evaluating the use of the 3rd dimension. […]
Dualing 3DIC consortia
Tags: 3D, IC, inspection, interconnect, MEMS, metal, process, R&D, thinning, TSV
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Friday, August 21st, 2009
James Quinn, CEO of Replisaurus, has been very busy executing for the last few years to bring his vision of a new metallization technology to the IC fab industry. Targeting the formation of Cu interconnects for advanced packaging applications, Quinn has assembled a great team to work with CEA-Leti and other industrial partners on a […]
Replisaurus ready to roll with Leti
Tags: Cu, deposition, ECD, IC, interconnect, Leti, MEMS, metal, packaging
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