Archive for the ‘fab’ Category
Thursday, March 12th, 2009
Stangl Semiconductor Equipment has launched its Linea horizontal inline wet process platform for cleaning and etching of crystalline silicon PV wafers. The fully-automated dry-in/dry-out system offers reliable production capacity of up to 3,400 wafers per hour (wph) corresponding to an estimated 60 MW per line running 156mm wafers. The system can also be configured at […]
Stangl inline PV wet tool
Tags: chemical, clean, etch, inline, PV, Si, wet
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Wednesday, March 11th, 2009
Nanometrics today announced the release of Version 2.0 of its NanoCD Suite of solutions for optical critical dimension (OCD) metrology, just one year after V1 was released. OCD (a.k.a., “scatterometry”) has been used to successfully control fab processes for many years. The major known limitation of the technique is model building from reference metrology data, […]
Nanometrics next NanoCD Suite for OCD
Tags: 22nm, 32nm, CD, CMP, etch, fab, finFET, high-k, HK, IC, metal-gate, metrology, MG, OCD
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Tuesday, March 10th, 2009
Bob Metcalfe is very smart, very successful, and very rich. Now an unashamed venture capitalist investing in both PV and home nuclear as part of his diversified portfolio, his major vision is for a new “enernet” that would fundamentally revolutionize the energy industry. He spoke of this as well as his invention of Ethernet this […]
Metcalfe envisions energy net
Tags: net, PV
Posted in IC, PV | Comments Off on Metcalfe envisions energy net
Monday, March 9th, 2009
SVTC Technologies has been busy announcing new business directions ever since Joe Bronson stepped in as CEO at the beginning of this year. Last month it announced a partnership with Entrepix to provide 300 mm chemical mechanical polishing (CMP) development and production services for customers who use the Tool Access Program (TAP) at the SVTC […]
SVTC provides analytical services
Tags: AFM, analysis, EELS, FIB, IC, materials, MEMS, SEM, SIMS, TEM
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Friday, March 6th, 2009
Veeco announced yesterday that it has entered into a strategic partnership with Daiyang Metal of Korea, a leader in the production of cold rolled stainless steel, to be its supplier of equipment to manufacture CIGS solar cells. As a first milestone in this relationship, Daiyang has placed an initial multi-million dollar purchase order with Veeco […]
Veeco and Daiyang partner for R2R CIGS PV
Tags: CIGS, Mo, PV, R2R, solar, TCO, thin-film
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Thursday, March 5th, 2009
Amkor Technology announced today that it will introduce its next generation package on package (PoP) platform at the IMAPS Device Packaging Conference next week in Scottsdale, AZ. Again begging the question, “Who needs TSV?” this this new PoP platform uses Amkor’s proprietary through mold via (TMV)(TM) interconnect technology to get to 3D IC stacking. {Blog […]
Amkor’s TMV PoP will go to 0.3mm
Tags: 3D, IC, memory, PoP, TMV, TSV, WLP
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Wednesday, March 4th, 2009
Electron beam direct write (EBDW) lithography is well-developed and has better potential resolution than any other method, but writing speeds did not keep up with Moore’s law after about 1980, leading to abysmal throughput (measured in hours per wafer). Now, the e-Beam Initiative focusing on design for e-beam manufacturing (DFEB) and multibeam writing using MEMS […]
eBeam Initiative and tool competition
Tags: 22nm, 32nm, 45nm, e-beam, EbDW, IC, litho, node
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Tuesday, March 3rd, 2009
IEDM 2008 included the unveiling of Schiltron’s (Session 34.6) revolutionary 3-D high density Flash technology that combines the smallest TFTs to date in series strings of up to 64 cells. The unique architecture effectively removes pass disturbs allowing large worst-case string currents and resulting in thinner tunnel oxides, lower erase voltages, and higher endurance than […]
IEDM2008 DG-TFT SONOS shown
Tags: 3D, 45nm, CMOS, Flash, IC, memory, NAND, SONOS, TFT
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Monday, March 2nd, 2009
Partners SII NanoTechnology and Carl Zeiss NTS have joined with ASML R&D and Toshiba’s process and manufacturing engineering groups to show a new way to create accurate cross-sections of soft photoresist and low-k dielectric lines in dense circuit patterns. First shown in a poster paper at SPIE last week was the ability to generate accurate […]
ArBID allows nanoscale cross-sections
Tags: 32nm, 45nm, APC, Ar, calibration, FIB, linewidth, metrology, SEM, TEM
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Thursday, February 26th, 2009
One year after this editor covered an SPIE panel on reference metrology and summarized the situation as “there is no more noise; there is only signal,” another lively panel at SPIE this evening discussed the need for not just precise but accurate critical dimension (CD) measurements in advanced IC lines. With smaller structures and reduced […]
IC reference metrology: small squirrelly signals
Tags: 2D, 32nm, AFM, bias, CD-SEM, IC, metrology
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