Archive for the ‘IC’ Category
Tuesday, July 7th, 2009
Applied Materials has extended physical vapor deposition (PVD) technology to be able to coat the sidewalls of 22nm node structures. “It’s been validated, it’s been shipped, and it’s been qualified in pilot lines for both logic and memory,” asserted Marek Radko, Applied Materials’ BEOL GPM Manager, in an exclusive interview with BetaSights. Separately, the company […]
New PVD for both nano and micro
Tags: 22nm, 32nm, barrier, barrier/seed, Cu, damascene, fab, IC, metal, PVD, seed, TSV, UBM
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Friday, May 8th, 2009
Today, Intel sponsored a history of the planar IC event at the Computer History Museum, in Mountain View, California. This, in the same week that the company pre-launches a new advertising campaign to try to position the company as “Sponsors of Tomorrow.” Based on the live event, the past was seriously wonderful. Based on these […]
Intel – sponsors of yesterday
Tags: Al, bipolar, boron, diffusion, fab, IC, MOS, NPN, R&D
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Friday, May 1st, 2009
Leaving California for the first time, the 12th annual IEEE International Interconnect Technology Conference (IITC) will take place in Sapporo, Japan, June 1-3. With lithographic shrinks in 2D dimensions slowing, interconnects between chips in packages and in 3D stacks will be the driver for increased density and functionality in ICs. Thus, the more than 80 […]
IITC in Sapporo for 22nm interconnects and 3D
Tags: 22nm, 32nm, 3D, 45nm, 65nm, contact, Cu, dielectric, IC, integration, low-k, TSV, W
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Wednesday, April 29th, 2009
Thermal management of advanced ICs remains challenging, with models often failing to predict the heat flow through multiple films and interfaces. Advanced Thermal Solutions (ATS) of Norwood, Massachusetts (US) will provide a half-day of free, no-obligation use of its unique Thermal Characterization Laboratory to engineers who need to perform thermal testing of their heat sinks, […]
Free thermal characterization lab time
Tags: characterization, FPD, IC, MEMS, Service, test, thermal
Posted in fab, IC, MEMS, Product, PV, Service | Comments Off on Free thermal characterization lab time
Thursday, April 23rd, 2009
Silicon Valley has certainly not been immune to the current economic conditions, with many companies announcing multiple rounds of layoffs and moving operations overseas. Yet for many it is still considered “the heart” of the high-tech industry. At today’s well-attended Silicon Valley Lunch Forum, organized by the Sales and Marketing Council of SEMI, three speakers […]
Silicon Valley fab futures seen at SEMI lunch forum
Tags: 200mm, CMOS, fab, IC, printed, PV, R&D, Si
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Wednesday, April 22nd, 2009
Researchers at MIT have demonstrated deep subwavelength lithography using a photochromic contrast enhancing layer, as reported in SciencExpress April 9. A thin photochromic film on top of a conventional photoresist layer was exposed to two wavelengths of light with two distinct patterns. One wavelength exposed the photoresist while the other made the photochromic film opaque […]
Deep sub-wavelength nanopatterning
Tags: 22nm, 32nm, DP, IC, litho, LLE, mask
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Tuesday, April 21st, 2009
IMEC has successfully transferred memory variability aware modeling (MemoryVAM), the first EDA tool for statistical memory analysis, to Samsung Electronics. The tool predicts yield loss of embedded SRAMs caused by the process variations of deep-submicron IC technologies. This may be the first proven design-for-manufacturing (DFM) tool to provide statistical analysis across degrees of abstraction from […]
IMEC eSRAM DFM tool to Samsung
Tags: 32nm, 45nm, DFM, EDA, eSRAM, IC, process, SRAM, variation, yield
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Monday, April 20th, 2009
The Materials Research Society (MRS) Spring Meeting in San Francisco is so huge, this year attracting a record of over 5,000 attendees, that strategy is needed to try to see any representative sample of the event. To provide in-depth information about new materials technologies, new symposia have been added over the years such that there […]
MRS spring meeting beyond Silicon Valley
Tags: 32nm, 3D, CMOS, FPD, high-k, HKMG, IC, low-k, materials, memory, MEMS, NVM, PV, R&D, Si
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Wednesday, April 15th, 2009
The first example of all-optical signal processing for communication above 100Gbit/s using silicon-based devices has been published in the April issue of Nature Photonics. Using deep-ultraviolet lithography, standard CMOS processing and organic molecular beam deposition, researchers from the University of Karlsruhe, IMEC and its associated laboratory INTEC at Ghent University, Lehigh University and ETH Zurich […]
IMEC enables Si-based all-optical IC
Tags: CMOS, DUV, IC, materials, Si
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Tuesday, April 14th, 2009
sp3 Diamond Technologies – the supplier of diamond film products, equipment, and services – today announced it is taking orders for 50mm and 100mm silicon on diamond (SOD) wafers for use as Gallium Nitride (GaN) substrates. Having worked with Nitronix on the GaN, sp3 Diamond Technologies uses combinations of thin-film depositions, wafer thinning, and layer […]
Silicon on Diamond 100mm wafers for GaN
Tags: 100mm, epi, GaN, HEMT, IC, LDMOS, materials, MOCVD, Si, SiC, SOD, thin-film, wafer
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