Archive for the ‘Product’ Category
Wednesday, August 12th, 2009
At the SEMICON West 2009 Device Scaling TechXPOT, moderated by this editor, SEMATECH’s Ray Jammy reviewed the latest results in scaling CMOS transistors. “We are litererally running out of atoms,” explained Jammy. “You can see the number of atoms in a gate dielectric.” When you have such thin layers, how do you control device parameters? […]
IC HK gate scaling limits
Tags: 22nm, 32nm, 45nm, ALD, dipole, fab, gate, HfO2, high-k, HKMG, IC, junction, R&D, RTP
Posted in Equipment, fab, IC, Material, Product | Comments Off on IC HK gate scaling limits
Tuesday, August 4th, 2009
While EUV Lithography may now be inevitable, according to SEMATECH Program Manager Bryan Rice, it may not be indispensable. SEMICON West offered a snapshot of progress towards the 32nm, 22nm, and 16nm device nodes at the Device Scaling TechXPOT, and the industry appears to have patterning options even if EUV encounters further delay. Yan Borodovsky […]
PS –We don’t need EUV!
Tags: 11nm, 16nm, 193i, 22nm, 7nm, EbDW, EUV, IC, ITRS, litho, NIL
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on PS –We don’t need EUV!
Thursday, July 30th, 2009
Evergreen Solar, the manufacturer of “String Ribbon” solar power products, announced it has finalized agreements with Jiawei Solarchina and the Wuhan government’s Hubei Science & Technology Investment Co., Ltd. (“HSTIC”) for the setup and operation of a new 100MW mc-Si panel fab. Factory construction has begun and the parties expect that wafer, cell, and panel […]
Wuhan provides US$33M for Evergreen/Jiawei 100MW PV line
Tags: fab, JV, mc-Si, PV, silicon, solar
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Wednesday, July 22nd, 2009
At SEMICON West and Intersolar North America last week in San Francisco, crossing guards danced to keep the throngs away from the vehicles at the corner of 4th and Howard, as many people flowed back and forth between the shows co-located across 4th Street from each other. SEMICON West, down ~30% in size from last […]
Intersolar and SEMICON in SF show fab tech marches on
Tags: 22nm, 32nm, IC, Material, OEM, PV, SEMI, Semiconductor
Posted in Equipment, fab, IC, Material, MEMS, Product, PV, Service | Comments Off on Intersolar and SEMICON in SF show fab tech marches on
Friday, July 10th, 2009
Intersolar North America 2009, co-located with SEMICON West in San Francisco next week, will include a Solar Startups Forum on July 16 to showcase some new technologies that are now in beta tests in the field. Select companies will make in depth presentations and offer insight into the atmosphere and environment of the solar industry […]
Successful Solar Startups to be shown
Tags: beta, CdTe, CPV, fab, PV, test, TW
Posted in Equipment, fab, Product, PV | Comments Off on Successful Solar Startups to be shown
Tuesday, July 7th, 2009
Applied Materials has extended physical vapor deposition (PVD) technology to be able to coat the sidewalls of 22nm node structures. “It’s been validated, it’s been shipped, and it’s been qualified in pilot lines for both logic and memory,” asserted Marek Radko, Applied Materials’ BEOL GPM Manager, in an exclusive interview with BetaSights. Separately, the company […]
New PVD for both nano and micro
Tags: 22nm, 32nm, barrier, barrier/seed, Cu, damascene, fab, IC, metal, PVD, seed, TSV, UBM
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Friday, May 1st, 2009
Leaving California for the first time, the 12th annual IEEE International Interconnect Technology Conference (IITC) will take place in Sapporo, Japan, June 1-3. With lithographic shrinks in 2D dimensions slowing, interconnects between chips in packages and in 3D stacks will be the driver for increased density and functionality in ICs. Thus, the more than 80 […]
IITC in Sapporo for 22nm interconnects and 3D
Tags: 22nm, 32nm, 3D, 45nm, 65nm, contact, Cu, dielectric, IC, integration, low-k, TSV, W
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Wednesday, April 29th, 2009
Thermal management of advanced ICs remains challenging, with models often failing to predict the heat flow through multiple films and interfaces. Advanced Thermal Solutions (ATS) of Norwood, Massachusetts (US) will provide a half-day of free, no-obligation use of its unique Thermal Characterization Laboratory to engineers who need to perform thermal testing of their heat sinks, […]
Free thermal characterization lab time
Tags: characterization, FPD, IC, MEMS, Service, test, thermal
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Thursday, April 23rd, 2009
Silicon Valley has certainly not been immune to the current economic conditions, with many companies announcing multiple rounds of layoffs and moving operations overseas. Yet for many it is still considered “the heart” of the high-tech industry. At today’s well-attended Silicon Valley Lunch Forum, organized by the Sales and Marketing Council of SEMI, three speakers […]
Silicon Valley fab futures seen at SEMI lunch forum
Tags: 200mm, CMOS, fab, IC, printed, PV, R&D, Si
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Wednesday, April 22nd, 2009
Researchers at MIT have demonstrated deep subwavelength lithography using a photochromic contrast enhancing layer, as reported in SciencExpress April 9. A thin photochromic film on top of a conventional photoresist layer was exposed to two wavelengths of light with two distinct patterns. One wavelength exposed the photoresist while the other made the photochromic film opaque […]
Deep sub-wavelength nanopatterning
Tags: 22nm, 32nm, DP, IC, litho, LLE, mask
Posted in fab, IC, Material, Product | Comments Off on Deep sub-wavelength nanopatterning