Tuesday, March 3rd, 2009
IEDM 2008 included the unveiling of Schiltron’s (Session 34.6) revolutionary 3-D high density Flash technology that combines the smallest TFTs to date in series strings of up to 64 cells. The unique architecture effectively removes pass disturbs allowing large worst-case string currents and resulting in thinner tunnel oxides, lower erase voltages, and higher endurance than […]
IEDM2008 DG-TFT SONOS shown
Tags: 3D, 45nm, CMOS, Flash, IC, memory, NAND, SONOS, TFT
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Monday, March 2nd, 2009
Partners SII NanoTechnology and Carl Zeiss NTS have joined with ASML R&D and Toshiba’s process and manufacturing engineering groups to show a new way to create accurate cross-sections of soft photoresist and low-k dielectric lines in dense circuit patterns. First shown in a poster paper at SPIE last week was the ability to generate accurate […]
ArBID allows nanoscale cross-sections
Tags: 32nm, 45nm, APC, Ar, calibration, FIB, linewidth, metrology, SEM, TEM
Posted in Equipment, fab, IC, Product | Comments Off on ArBID allows nanoscale cross-sections