Wednesday, August 26th, 2009
IMEC/F-IZM/SUSS/TM vs. SEMATECH/Leti/EVG/Brewer. The leading R&D consortia have aligned (pun intended) with leading equipment and materials suppliers to create ultra-thin silicon wafer handling technologies for 3D ICs. With the ability to shrink circuit dimensions in 2D becoming ever more difficult, most of the world’s IC fab leaders are evaluating the use of the 3rd dimension. […]
Dualing 3DIC consortia
Tags: 3D, IC, inspection, interconnect, MEMS, metal, process, R&D, thinning, TSV
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Friday, August 21st, 2009
James Quinn, CEO of Replisaurus, has been very busy executing for the last few years to bring his vision of a new metallization technology to the IC fab industry. Targeting the formation of Cu interconnects for advanced packaging applications, Quinn has assembled a great team to work with CEA-Leti and other industrial partners on a […]
Replisaurus ready to roll with Leti
Tags: Cu, deposition, ECD, IC, interconnect, Leti, MEMS, metal, packaging
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Monday, August 17th, 2009
Luminescent Technologies, Inc., a computational lithography company, has broadened its reach by announcing the industry’s first offline computational photomask inspection product (unofficially named LAIPH for Luminescent Automated Image Processing Hub). A “premier company in Asia” is the first customer to qualify the new computational defect review product in volume production. According to a Luminescent representative, […]
Luminescent Inspection or LAIPH
Tags: 22nm, 32nm, 45nm, aerial, defect, IC, inspection, litho, mask
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Wednesday, August 12th, 2009
At the SEMICON West 2009 Device Scaling TechXPOT, moderated by this editor, SEMATECH’s Ray Jammy reviewed the latest results in scaling CMOS transistors. “We are litererally running out of atoms,” explained Jammy. “You can see the number of atoms in a gate dielectric.” When you have such thin layers, how do you control device parameters? […]
IC HK gate scaling limits
Tags: 22nm, 32nm, 45nm, ALD, dipole, fab, gate, HfO2, high-k, HKMG, IC, junction, R&D, RTP
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Tuesday, August 4th, 2009
While EUV Lithography may now be inevitable, according to SEMATECH Program Manager Bryan Rice, it may not be indispensable. SEMICON West offered a snapshot of progress towards the 32nm, 22nm, and 16nm device nodes at the Device Scaling TechXPOT, and the industry appears to have patterning options even if EUV encounters further delay. Yan Borodovsky […]
PS –We don’t need EUV!
Tags: 11nm, 16nm, 193i, 22nm, 7nm, EbDW, EUV, IC, ITRS, litho, NIL
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