Monday, October 18th, 2010
IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.
IEDM to show 22nm alt-channels and dual- and tri-gates
Tags: 22nm, analog, CEA/Leti, CMOS, dual-gate, FDSOI, finFET, graphene, IC, IEDM, Infineon, Intel, memory, MEMS, Mittal, ReRAM, RF, SOI, transistor, tri-gate, TSMC
Posted in fab, IC, Material, MEMS, Product, Service | Comments Off on IEDM to show 22nm alt-channels and dual- and tri-gates
Tuesday, October 5th, 2010
Direct-write, maskless, lithography using e-beams is not ready for 22nm node IC manufacturing, and the SPIE BACUS presentations show EbDW issues include data transfer and inspection.
Maskless lithography not ready for 22nm
Tags: 22nm, BACUS, DUV, EbDW, IC, litho, lithography, MAPPER, mask, R&D, REBL, SPIE
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on Maskless lithography not ready for 22nm
