Monday, November 29th, 2010
Applied Materials lauches Centris platform for AdvantEdge MESA etch chambers, claiming 180 wph throughput, 0.8nm CD, and 30% lower CoO. Also releases new ultra HDP Silvia etch chamber for Centura, claiming $10 per wafer TSV etch.
Applied Materials launches new HVM etch platform
Tags: 32nm, Applied Materials, CD, Centris, Centura, control, CoO, DP, etch, gas, HDP, HVM, IC, litho, MFC, OEM, Silvia, TSV, uniformity
Posted in Equipment, fab, IC, Product | Comments Off on Applied Materials launches new HVM etch platform
Friday, November 26th, 2010
Qcept Technologies’ ChemitriQ5000 may help GlobalFoundries vs. TSMC in gate-first HKMG integration for 32nm foundry customers with fab metrology for control of yield excursions
Qcept may help GloFo vs. TSMC
Tags: 32nm, CMOS, fab, GF, GL, HKMG, IC, IEEE, metal, metrology, NVD, PMOS, poly, RMG, SiON, yield
Posted in Equipment, fab, IC, Material, Product | Comments Off on Qcept may help GloFo vs. TSMC
Monday, November 8th, 2010
Xilinx 28nm FPGA Virtex-7 uses TSMC 65nm multi-level-metal (MLM) and through-silicon-via (TSV) Si-interposer for 2M gate and ARM-core integration product family.
Xilinx uses TSV+MLM interposers for 28nm FPGA
Tags: 22nm, 28nm, 32nm, ARM, ASSID, Cu, FPGA, IC, IEEE, integration, interposer, IZM, MLM, Si, SoC, TSMC, TSV, Xilinx, yield
Posted in fab, IC, Product, Service | Comments Off on Xilinx uses TSV+MLM interposers for 28nm FPGA
