Tuesday, December 21st, 2010
Graphene—the 2D hexagonal lattice of carbon—has been under investigation as a new material for electronics applications due to it’s high mobility and other unique properties. At IEDM this year, an entire session (#23) was devoted to showcasing graphene devices, and to sharing the latest processing tricks to grow and (sometimes) transfer the single-atomic-layer of carbon […]
Graphene devices and processing shown at IEDM
Tags: analog, analogue, backgate, bandgap, gate, GeorgiaTech, GFET, graphene, HfO2, HK, IBM, IC, IEDM, MIT, mixed-signal, mobility, RF, SAIT, SiC, THz
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Tuesday, December 14th, 2010
Through-silicon vias (TSV) by IBM and Semtech for ADC/DSP solutions use copper and deep-trench capacitors for RF applications; IEDM 2010 papers show TSV in active chips progressing slowly.
TSV interposers by IBM/Semtech for ADC/DSP
Tags: 65nm, 90nm, ADC/DSP, CEA-Leti, Cu, FPGA, IBM, IC, interposer, MLM, Semtech, Si, TSMC, TSV, W
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