Friday, January 7th, 2011
IEDM 2010 showed evolutions of NAND Flash with ALD IPD and ECC to 1Xnm node processing, and embedded-DRAM (eDRAM) capacitor stacks in porous low-k, meaning mainstream memory technologies will continue to dominate commercial volumes.
NAND Flash and DRAM evolutions
Tags: 12nm, 16nm, 22nm, 25nm, 2Xnm, 32nm, 3Xnm, ALD, COB, Cu, DRAM, eDRAM, Flash, HfO2, IC, IEDM, Intel, Micron, MLC, MPS, NAND, PCM, Renesas, ReRAM, Samsung, SARP, W
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