Monday, February 9th, 2009
Toshiba claims the prototype of a new Ferroelectric Random Access Memory (FRAM) cell sized at 15F2 acheives read and write speed of 1.6-GB/s using a 130nm node CMOS process. The company will show details of this high bandwidth 128Mb non-volative RAM technology at the International Solid-State Circuits Conference 2009 (ISSCC 2009; Session 27.5) in San […]
Toshiba 128Mb FRAM using 15F2 cell
Tags: ALD, CMOS, FRAM, IC, memory, MOCVD, non-volatile
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Thursday, February 5th, 2009
Microbridge Technologies, the inventor of passive, analog, MEMS-based precision IC calibration products known as rejustors, announced it has successfully closed an internal round of funding to build out a new presssure sensor family of chips. “The company will launch a line of Micro-Flow pressure sensors that achieve new levels of performance for a wide range […]
Microbridge pressure sensor family funded
Tags: CMOS, foundry, funding, IC, integrated, MEMS, pressure, sensor
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Wednesday, January 28th, 2009
Silicon Clocks, the developer of custom semiconductor timing solutions that has reinvented itself as a “custom product development house” with a new CEO, has announced a new product based on its CMOS-MEMS (CMEMS) embedded approach. CMEMS-ZeroThermal passive temperature compensation resonators exhibit comparable temperature stability to quartz crystals, while drastically simplifying oscillator design, and reportedly reducing […]
Silicon Clocks embeds MEMS on CMOS
Tags: clock, CMOS, crystal, integration, IP, MEMS, resonator, Si, SiGe
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Tuesday, January 13th, 2009
At SEMI’s Industry Strategy Symposium (ISS) running at Half Moon Bay, California today, IMEC president and CEO Gilbert Declerck talked about the need for R&D to facilitate IC industry growth. An industry based on answering the question, “what have you done for me lately?” can never rest on past successes and must continue to innovate. […]
ISS growth theme set by IMEC
Tags: 32nm, 3D, ADT, CMOS, EUV, fab, IC, investment, lithography, MEMS, Moore, R&D, SoC
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Wednesday, January 7th, 2009
On January 6, 2009, ASM International and SAFC Hitech (a business segment within SAFC, a member of the Sigma-Aldrich Group) announced that they have entered into a certified manufacturer and partnership agreement for ALD precursors for barium- and strontium-based high-k insulators. The agreement includes certification criteria, a license to certain ASM ALD patents, and a […]
ASM and SAFC Hitech to work on Ba and Sr ALD
Tags: 32nm, ALD, CMOS, cyclopentadienyl, DRAM, high-k, HK, IC, MOCVD, precursor
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Tuesday, January 6th, 2009
The first issue of the BetaSights Newsletter has been published (see link to a free copy in the right-side column of this page under “Newsletters”), and a reader has already provided a correction. Michael Current (San Jose, California) noticed that the initial web-link to the slides from Prof. Asenov’s IEDM 2008 variability presentation was incorrect; […]
Very variable transistors
Tags: CMOS, IC, node, scaling, shrink, variability
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