Posts Tagged ‘litho’
Monday, March 8th, 2010
This year’s plenary sessions of the SPIE Advanced Lithography Symposium exposed the complexities of patterning ICs in high-volume manufacturing (HVM) at the 22nm node and beyond. Steppers using 193nm ArF immersion (193i) will be extended using double-patterning (DP) schemes, since the extreme-ultra-violet litho (EUVL) infrastructure is again delayed. R&D to support DP integration has led […]
SPIE Plenaries: double-patterning and two-tone resist
Tags: 16nm, 193nm, 22nm, 32nm, EbDW, EUV, IC, inspection, litho, mask, NIL, RET, reticle, SMO
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Monday, March 1st, 2010
Molecular Imprints, Inc, announced their first nanopatterning tool designed for pilot and volume production of patterned hard disc drive (HDD) substrates at the SPIE Advanced Lithography Symposium in San Jose, CA February 22. The NuTera HD7000 uses Jet and Flash Imprint Lithography (J-FIL) technology to print over 300 double sided disks per hour up to […]
Molecular Imprints HDD production tool and IC plans
Tags: 22nm, HDD, HVM, litho, NGL, NIL
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Saturday, February 20th, 2010
The SPIE’s 7th Frits Zernike Award for Advances in Optical Microlithography goes to M. David Levenson, BetaSights Litho & DFM Editor, in recognition of one of the most important developments in lithography resolution enhancement of the last twenty years, the phase shifting mask (PSM). About 30 years ago at the IBM San Jose Lab, Levenson […]
Leading through Darkness: M. David Levenson interviewed
Tags: EUV, IC, LELE, litho, R&D
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Thursday, October 22nd, 2009
If EUV lithography is to succeed, infrastructure gaps will need to be addressed forthwith. The lack of inspection tools for EUV masks and substrates constitutes one such gap, now recognized as a priority by SEMATECH. At the OSA/APS Frontiers in Optics (FiO) meeting held in San Jose, October 11-15, Carmen Menoni of Colorado State University […]
EUV mask inspection advances
Tags: 22nm, 32nm, actinic, EUV, IC, inspection, litho, mask
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Sunday, October 4th, 2009
KLA-Tencor recently announced its long awaited 193nm reticle defect inspection tool, the Teron 600. Wafer scanners adopted 193nm exposure wavelength years ago in order to shrink circuit features below the resolution limit set by the previous (248nm) wavelength, roughly 130nm. The photomasks used in those tools, however, continued to be inspected at 257nm, in spite […]
New 193nm mask inspection tool
Tags: 193nm, 22nm, 32nm, EUV, IC, inspection, litho, mask, reticle, SMO
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Friday, September 18th, 2009
At SEMICON West this year, ASML announced tools that fleshed out their Holistic Lithography scheme introduced at SPIE’s Advanced Lithography Symposium in February of this year. The key idea of Holistic Lithography, according to Bert Koek, senior vice president of the applications products group at ASML, is integrating computational lithography, wafer printing, and process control […]
Lithography going holistic
Tags: 22nm, 32nm, computational, i193, IC, litho, OPC, SMO
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Monday, August 17th, 2009
Luminescent Technologies, Inc., a computational lithography company, has broadened its reach by announcing the industry’s first offline computational photomask inspection product (unofficially named LAIPH for Luminescent Automated Image Processing Hub). A “premier company in Asia” is the first customer to qualify the new computational defect review product in volume production. According to a Luminescent representative, […]
Luminescent Inspection or LAIPH
Tags: 22nm, 32nm, 45nm, aerial, defect, IC, inspection, litho, mask
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Tuesday, August 4th, 2009
While EUV Lithography may now be inevitable, according to SEMATECH Program Manager Bryan Rice, it may not be indispensable. SEMICON West offered a snapshot of progress towards the 32nm, 22nm, and 16nm device nodes at the Device Scaling TechXPOT, and the industry appears to have patterning options even if EUV encounters further delay. Yan Borodovsky […]
PS –We don’t need EUV!
Tags: 11nm, 16nm, 193i, 22nm, 7nm, EbDW, EUV, IC, ITRS, litho, NIL
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Wednesday, April 22nd, 2009
Researchers at MIT have demonstrated deep subwavelength lithography using a photochromic contrast enhancing layer, as reported in SciencExpress April 9. A thin photochromic film on top of a conventional photoresist layer was exposed to two wavelengths of light with two distinct patterns. One wavelength exposed the photoresist while the other made the photochromic film opaque […]
Deep sub-wavelength nanopatterning
Tags: 22nm, 32nm, DP, IC, litho, LLE, mask
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Thursday, April 9th, 2009
On April 7, 2009, KLA-Tencor introduced the TeraScanXR, the latest version of their TeraScan reticle inspection system, this one intended for 32nm node DUV masks. This new tool, an extension of existing reticle inspection systems, is designed to provide mask manufacturers better sensitivity, lower cost-per-inspection and faster mask dispositioning. Improvements in overall sensitivity in die-to-die […]
All-plane reticle inspection for 32nm
Tags: 32nm, DUV, IC, inspect, litho, mask, reticle
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