Thursday, January 29th, 2009
Aixtron and Ovonyx announced a JDP for Atomic Vapor Deposition (AVD®) process technology to push scaling of next-generation phase change memory (PCM) products. Since it is expected to replace current high-density memory, PCM cells must be made dense and so companies like Samsung (Ref: BetaSights Newsletter 0001) and Numonyx require CVD-like processes for gap-fill instead […]
Aixtron and Ovonyx partner for PCM deposition
Tags: ALD, chamber, CVD, memory, PCM, precursor, PVD, Si, vapor
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Tuesday, January 27th, 2009
After the 1st “act” of the story of Intel as a memory chip company founded in 1969, the 2nd act really started in 1985 with the decision to bet the company on the 80386 microprocessor according to Richard S. Tedlow, Harvard Business School professor and residential scholar of the Computer History Museum, in a lecture […]
Shaw to lead 3rd act at Intel
Tags: 90nm, fab, high-k, HKMG, IC, logic, memory, microprocessor, R&D, SoC
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Friday, January 16th, 2009
At SEMI’s SMC yesterday, Sung Wook Park, executive vice president and general manager of Hynix Semiconductor, provided a keynote address on the materials needs for mainstream memory chips over the next decade. DRAMs will likely turn into STTRAMs, and NAND Flash will probably be replaced by ReRAM (Ref: Ed’s Threads 080505). Combinatorial materials R&D company […]
Hynix sees STTRAM and ReRAM some day
Tags: DRAM, Flash, materials, memory, MTJ, NAND, PCM, R&D, RAM, ReRAM, SMC, STT, TMR
Posted in Equipment, fab, IC, Material, Product | Comments Off on Hynix sees STTRAM and ReRAM some day