Posts Tagged ‘22nm’
Friday, October 9th, 2009
Founded in 1984 with Flemish government support, IMEC has reached 25 years. To celebrate the organization’s accomplishments, BetaSights joined other industry media outlets attending a research review event in beautiful Leuven, Belgium. From 1999 to 2009 has been the “phase of international breakthrough” as described by current president Luc Van den hove. Working with OEMs […]
IMEC betas for TSMC HVM
Tags: 193nm, 22nm, 300mm, 32nm, beta, EUV, finFET, Flash, HB-LED, IC, logic, MEMS, PV, SiGe, TANOS
Posted in Equipment, fab, IC, Material, MEMS, Product, PV, Service | Comments Off on IMEC betas for TSMC HVM
Sunday, October 4th, 2009
KLA-Tencor recently announced its long awaited 193nm reticle defect inspection tool, the Teron 600. Wafer scanners adopted 193nm exposure wavelength years ago in order to shrink circuit features below the resolution limit set by the previous (248nm) wavelength, roughly 130nm. The photomasks used in those tools, however, continued to be inspected at 257nm, in spite […]
New 193nm mask inspection tool
Tags: 193nm, 22nm, 32nm, EUV, IC, inspection, litho, mask, reticle, SMO
Posted in Equipment, fab, IC, Product | Comments Off on New 193nm mask inspection tool
Friday, September 18th, 2009
At SEMICON West this year, ASML announced tools that fleshed out their Holistic Lithography scheme introduced at SPIE’s Advanced Lithography Symposium in February of this year. The key idea of Holistic Lithography, according to Bert Koek, senior vice president of the applications products group at ASML, is integrating computational lithography, wafer printing, and process control […]
Lithography going holistic
Tags: 22nm, 32nm, computational, i193, IC, litho, OPC, SMO
Posted in Equipment, fab, IC, Product, Service | Comments Off on Lithography going holistic
Monday, August 17th, 2009
Luminescent Technologies, Inc., a computational lithography company, has broadened its reach by announcing the industry’s first offline computational photomask inspection product (unofficially named LAIPH for Luminescent Automated Image Processing Hub). A “premier company in Asia” is the first customer to qualify the new computational defect review product in volume production. According to a Luminescent representative, […]
Luminescent Inspection or LAIPH
Tags: 22nm, 32nm, 45nm, aerial, defect, IC, inspection, litho, mask
Posted in Equipment, fab, IC, Product, Service | Comments Off on Luminescent Inspection or LAIPH
Wednesday, August 12th, 2009
At the SEMICON West 2009 Device Scaling TechXPOT, moderated by this editor, SEMATECH’s Ray Jammy reviewed the latest results in scaling CMOS transistors. “We are litererally running out of atoms,” explained Jammy. “You can see the number of atoms in a gate dielectric.” When you have such thin layers, how do you control device parameters? […]
IC HK gate scaling limits
Tags: 22nm, 32nm, 45nm, ALD, dipole, fab, gate, HfO2, high-k, HKMG, IC, junction, R&D, RTP
Posted in Equipment, fab, IC, Material, Product | Comments Off on IC HK gate scaling limits
Tuesday, August 4th, 2009
While EUV Lithography may now be inevitable, according to SEMATECH Program Manager Bryan Rice, it may not be indispensable. SEMICON West offered a snapshot of progress towards the 32nm, 22nm, and 16nm device nodes at the Device Scaling TechXPOT, and the industry appears to have patterning options even if EUV encounters further delay. Yan Borodovsky […]
PS –We don’t need EUV!
Tags: 11nm, 16nm, 193i, 22nm, 7nm, EbDW, EUV, IC, ITRS, litho, NIL
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on PS –We don’t need EUV!
Wednesday, July 22nd, 2009
At SEMICON West and Intersolar North America last week in San Francisco, crossing guards danced to keep the throngs away from the vehicles at the corner of 4th and Howard, as many people flowed back and forth between the shows co-located across 4th Street from each other. SEMICON West, down ~30% in size from last […]
Intersolar and SEMICON in SF show fab tech marches on
Tags: 22nm, 32nm, IC, Material, OEM, PV, SEMI, Semiconductor
Posted in Equipment, fab, IC, Material, MEMS, Product, PV, Service | Comments Off on Intersolar and SEMICON in SF show fab tech marches on
Tuesday, July 7th, 2009
Applied Materials has extended physical vapor deposition (PVD) technology to be able to coat the sidewalls of 22nm node structures. “It’s been validated, it’s been shipped, and it’s been qualified in pilot lines for both logic and memory,” asserted Marek Radko, Applied Materials’ BEOL GPM Manager, in an exclusive interview with BetaSights. Separately, the company […]
New PVD for both nano and micro
Tags: 22nm, 32nm, barrier, barrier/seed, Cu, damascene, fab, IC, metal, PVD, seed, TSV, UBM
Posted in Equipment, fab, IC, Product | Comments Off on New PVD for both nano and micro
Friday, May 1st, 2009
Leaving California for the first time, the 12th annual IEEE International Interconnect Technology Conference (IITC) will take place in Sapporo, Japan, June 1-3. With lithographic shrinks in 2D dimensions slowing, interconnects between chips in packages and in 3D stacks will be the driver for increased density and functionality in ICs. Thus, the more than 80 […]
IITC in Sapporo for 22nm interconnects and 3D
Tags: 22nm, 32nm, 3D, 45nm, 65nm, contact, Cu, dielectric, IC, integration, low-k, TSV, W
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on IITC in Sapporo for 22nm interconnects and 3D
Wednesday, April 22nd, 2009
Researchers at MIT have demonstrated deep subwavelength lithography using a photochromic contrast enhancing layer, as reported in SciencExpress April 9. A thin photochromic film on top of a conventional photoresist layer was exposed to two wavelengths of light with two distinct patterns. One wavelength exposed the photoresist while the other made the photochromic film opaque […]
Deep sub-wavelength nanopatterning
Tags: 22nm, 32nm, DP, IC, litho, LLE, mask
Posted in fab, IC, Material, Product | Comments Off on Deep sub-wavelength nanopatterning