Posts Tagged ‘32nm’
Wednesday, March 4th, 2009
Electron beam direct write (EBDW) lithography is well-developed and has better potential resolution than any other method, but writing speeds did not keep up with Moore’s law after about 1980, leading to abysmal throughput (measured in hours per wafer). Now, the e-Beam Initiative focusing on design for e-beam manufacturing (DFEB) and multibeam writing using MEMS […]
eBeam Initiative and tool competition
Tags: 22nm, 32nm, 45nm, e-beam, EbDW, IC, litho, node
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Monday, March 2nd, 2009
Partners SII NanoTechnology and Carl Zeiss NTS have joined with ASML R&D and Toshiba’s process and manufacturing engineering groups to show a new way to create accurate cross-sections of soft photoresist and low-k dielectric lines in dense circuit patterns. First shown in a poster paper at SPIE last week was the ability to generate accurate […]
ArBID allows nanoscale cross-sections
Tags: 32nm, 45nm, APC, Ar, calibration, FIB, linewidth, metrology, SEM, TEM
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Thursday, February 26th, 2009
One year after this editor covered an SPIE panel on reference metrology and summarized the situation as “there is no more noise; there is only signal,” another lively panel at SPIE this evening discussed the need for not just precise but accurate critical dimension (CD) measurements in advanced IC lines. With smaller structures and reduced […]
IC reference metrology: small squirrelly signals
Tags: 2D, 32nm, AFM, bias, CD-SEM, IC, metrology
Posted in Equipment, fab, IC, Product | Comments Off on IC reference metrology: small squirrelly signals
Monday, February 23rd, 2009
JEOL will install the first e-beam direct-write-on-wafer (EBDW) lithography tool to support nanotechnology development in the Pacific Northwest when the University of Washington takes delivery of a JBX-6300FS tool. The system will be installed in the state-funded Washington Technology Center Microfabrication Lab. Funding for the tool acquisition was provided through a state-supported STAR researchers’ grant […]
JEOL EBDW litho in MEMS prototyping lab
Tags: 32nm, 45nm, EbDR, IC, lithography, MEMS, NIL, node, R&D
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Thursday, February 19th, 2009
JSR announced today that it has entered into several joint development partnerships (JDP) with IBM to develop low-k dielectrics for 32nm and 22nm nodes of semiconductor technology. The companies will work on next generation materials JSR has had in development and commercial production, including low-k dielectrics and a broad range of photoresists. “This larger scale […]
JSR and IBM low-k JDPs for 32/22nm
Tags: 32nm, Cu, CVD, IC, litho, low-k, porous, resist, spin-on, ULK
Posted in fab, IC, Material, Product | Comments Off on JSR and IBM low-k JDPs for 32/22nm
Monday, January 26th, 2009
CEA/Leti, along with e-beam lithography supplier Vistec, and new design and software company D2S, recently announced a collaboration focused on refining and validating advanced design-for-e-beam (DFEB) solutions for 45nm and 32nm nodes. Over the next 12 months, Leti will manufacture test chips using a combination of D2S’ design and software capabilities along with the latest […]
CEA/Leti, Vistec, and D2S push EbDW
Tags: 32nm, 45nm, EbDR, IC, lithography, node, SoC
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Tuesday, January 13th, 2009
At SEMI’s Industry Strategy Symposium (ISS) running at Half Moon Bay, California today, IMEC president and CEO Gilbert Declerck talked about the need for R&D to facilitate IC industry growth. An industry based on answering the question, “what have you done for me lately?” can never rest on past successes and must continue to innovate. […]
ISS growth theme set by IMEC
Tags: 32nm, 3D, ADT, CMOS, EUV, fab, IC, investment, lithography, MEMS, Moore, R&D, SoC
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Wednesday, January 7th, 2009
On January 6, 2009, ASM International and SAFC Hitech (a business segment within SAFC, a member of the Sigma-Aldrich Group) announced that they have entered into a certified manufacturer and partnership agreement for ALD precursors for barium- and strontium-based high-k insulators. The agreement includes certification criteria, a license to certain ASM ALD patents, and a […]
ASM and SAFC Hitech to work on Ba and Sr ALD
Tags: 32nm, ALD, CMOS, cyclopentadienyl, DRAM, high-k, HK, IC, MOCVD, precursor
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Monday, January 5th, 2009
FSI International, Inc. (Nasdaq: FSII) announced December 23, 2008 that it has received an order for it’s new ORION® single wafer cleaning platform after a beta evaluation by a major semiconductor manufacturer. The tool will be used for resist strip in 32nm metal interconnect modules, using FSI’s proprietary “ViPR” extension of the classic “piranha” (a.k.a., […]
FSI cleaning tool exits beta with payment
Tags: 32nm, beta, clean, interconnect, Semiconductor, single-wafer, SPM, ViPR
Posted in Equipment, fab, IC, Product | Comments Off on FSI cleaning tool exits beta with payment