Posts Tagged ‘IC’
Wednesday, April 22nd, 2009
Researchers at MIT have demonstrated deep subwavelength lithography using a photochromic contrast enhancing layer, as reported in SciencExpress April 9. A thin photochromic film on top of a conventional photoresist layer was exposed to two wavelengths of light with two distinct patterns. One wavelength exposed the photoresist while the other made the photochromic film opaque […]
Deep sub-wavelength nanopatterning
Tags: 22nm, 32nm, DP, IC, litho, LLE, mask
Posted in fab, IC, Material, Product | Comments Off on Deep sub-wavelength nanopatterning
Tuesday, April 21st, 2009
IMEC has successfully transferred memory variability aware modeling (MemoryVAM), the first EDA tool for statistical memory analysis, to Samsung Electronics. The tool predicts yield loss of embedded SRAMs caused by the process variations of deep-submicron IC technologies. This may be the first proven design-for-manufacturing (DFM) tool to provide statistical analysis across degrees of abstraction from […]
IMEC eSRAM DFM tool to Samsung
Tags: 32nm, 45nm, DFM, EDA, eSRAM, IC, process, SRAM, variation, yield
Posted in fab, IC, Product, Service | Comments Off on IMEC eSRAM DFM tool to Samsung
Monday, April 20th, 2009
The Materials Research Society (MRS) Spring Meeting in San Francisco is so huge, this year attracting a record of over 5,000 attendees, that strategy is needed to try to see any representative sample of the event. To provide in-depth information about new materials technologies, new symposia have been added over the years such that there […]
MRS spring meeting beyond Silicon Valley
Tags: 32nm, 3D, CMOS, FPD, high-k, HKMG, IC, low-k, materials, memory, MEMS, NVM, PV, R&D, Si
Posted in fab, FPD, IC, MEMS, PV | Comments Off on MRS spring meeting beyond Silicon Valley
Wednesday, April 15th, 2009
The first example of all-optical signal processing for communication above 100Gbit/s using silicon-based devices has been published in the April issue of Nature Photonics. Using deep-ultraviolet lithography, standard CMOS processing and organic molecular beam deposition, researchers from the University of Karlsruhe, IMEC and its associated laboratory INTEC at Ghent University, Lehigh University and ETH Zurich […]
IMEC enables Si-based all-optical IC
Tags: CMOS, DUV, IC, materials, Si
Posted in fab, IC | Comments Off on IMEC enables Si-based all-optical IC
Tuesday, April 14th, 2009
sp3 Diamond Technologies – the supplier of diamond film products, equipment, and services – today announced it is taking orders for 50mm and 100mm silicon on diamond (SOD) wafers for use as Gallium Nitride (GaN) substrates. Having worked with Nitronix on the GaN, sp3 Diamond Technologies uses combinations of thin-film depositions, wafer thinning, and layer […]
Silicon on Diamond 100mm wafers for GaN
Tags: 100mm, epi, GaN, HEMT, IC, LDMOS, materials, MOCVD, Si, SiC, SOD, thin-film, wafer
Posted in fab, IC, Material, Product | Comments Off on Silicon on Diamond 100mm wafers for GaN
Friday, April 10th, 2009
The Materials Research Society (MRS) Bulletin for April 2009 covers some of the newest engineering work for the growth of large and pure electronic crystals. In this week before the annual MRS Spring Meeting in San Francisco, this issue of the monthly MRS members magazine provides an excellent overview of the latest technologies used to […]
Crystal growers and complex crucibles
Tags: crystal, defect, epitaxy, GaAs, Ge, growth, IC, InP, PV, Si, wafer
Posted in fab, IC, Material, MEMS, Product, PV | Comments Off on Crystal growers and complex crucibles
Thursday, April 9th, 2009
On April 7, 2009, KLA-Tencor introduced the TeraScanXR, the latest version of their TeraScan reticle inspection system, this one intended for 32nm node DUV masks. This new tool, an extension of existing reticle inspection systems, is designed to provide mask manufacturers better sensitivity, lower cost-per-inspection and faster mask dispositioning. Improvements in overall sensitivity in die-to-die […]
All-plane reticle inspection for 32nm
Tags: 32nm, DUV, IC, inspect, litho, mask, reticle
Posted in Equipment, fab, IC, Product | Comments Off on All-plane reticle inspection for 32nm
Wednesday, April 8th, 2009
IMEC has begun expanding its beautiful Leuven, Belgium campus facilities, starting with 2,800 square-meters of research labs and including the extension of its state-of-the-art clean room. With this extension, IMEC will expand its research on 22nm CMOS and beyond, low-cost and high-efficiency solar cells, and biomedical electronics. The Flemish Government invests 35 million euro and […]
IMEC at 25 still growing
Tags: 22nm, 450mm, CMOS, IC, organic, PV, R&D, Si
Posted in fab, IC, MEMS, Product, PV, Service | Comments Off on IMEC at 25 still growing
Tuesday, April 7th, 2009
Semiconductor Equipment and Materials International (SEMI) collects and reports market size information for key sectors of the semiconductor ecosystem. It recently issued figures for the materials market, which in 2008 totaled $42.7 billion, essentially flat with the prior year. According to SEMI, rapidly slowing economic conditions in the fourth quarter squelched prospects for year-over-year growth […]
Semiconductor fab materials market trends
Tags: CMP, Cu, IC, materials, Si, wafers
Posted in fab, IC, Material | Comments Off on Semiconductor fab materials market trends
Monday, April 6th, 2009
Applied Materials and Disco announced a joint effort to develop wafer thinning processes for fabricating through-silicon vias (TSV) for future 3D IC stacks. The two companies, world leaders in thin-films and thinning (respectively) for silicon wafers, will be working together to develop integrated, high-performance process flows intended to lower the cost, reduce the risk and […]
Applied Materials and Disco 3D TSV joint effort
Tags: 3D, Cu, DRIE, etch, IC, integration, TSV
Posted in fab, IC, MEMS | Comments Off on Applied Materials and Disco 3D TSV joint effort