Posts Tagged ‘IC’
Tuesday, March 17th, 2009
Breaking news about a leading porous low-k (PLK) material from Japan was first revealed in the SemiNeedle Planarization Lounge Forums (www.semineedle.com/forums/5001) about two months ago. During an expert panel discussion on CMP integration with low-k materials (moderated by this editor, summarized in “Chemical-Mechanical Planarization (CMP) technology consensus 09Q1” publication available at the site), Dick James, […]
Low-k MPS and NCS updates
Tags: cap, CMP, dielectric, IC, interconnect, low-k, MPS, NCS
Posted in fab, IC, Material, Product | Comments Off on Low-k MPS and NCS updates
Monday, March 16th, 2009
The BetaBlog of March 5th was originally titled “Amkor chooses TMV not TSV for PoP” and Amkor’s stalwart vice president of business development Lee Smith contacted BetaSights to correct the impression that Amkor may have chosen to not work on TSV. I’d intended the original title to be somewhat playful; since TSV is chip-level while […]
Amkor TMV also for TSV
Tags: 3D, IC, memory, PoP, TMV, TSV, WLP
Posted in fab, IC | Comments Off on Amkor TMV also for TSV
Friday, March 13th, 2009
Trust is the foundation of all trade and business. Without trust, no deal can get done, no venture can be launched, no discussion can even begin. Trust has been shaken in individual businesses in recent years, but recently exposed financial scams have shaken confidence not just in one or a collection of companies but almost […]
Trust your fab – CDO vs CDO
Tags: CDO, fab, FPD, IC, MEMS, PV, R&D
Posted in fab, FPD, IC, MEMS, PV | Comments Off on Trust your fab – CDO vs CDO
Wednesday, March 11th, 2009
Nanometrics today announced the release of Version 2.0 of its NanoCD Suite of solutions for optical critical dimension (OCD) metrology, just one year after V1 was released. OCD (a.k.a., “scatterometry”) has been used to successfully control fab processes for many years. The major known limitation of the technique is model building from reference metrology data, […]
Nanometrics next NanoCD Suite for OCD
Tags: 22nm, 32nm, CD, CMP, etch, fab, finFET, high-k, HK, IC, metal-gate, metrology, MG, OCD
Posted in Equipment, fab, IC, Product | Comments Off on Nanometrics next NanoCD Suite for OCD
Monday, March 9th, 2009
SVTC Technologies has been busy announcing new business directions ever since Joe Bronson stepped in as CEO at the beginning of this year. Last month it announced a partnership with Entrepix to provide 300 mm chemical mechanical polishing (CMP) development and production services for customers who use the Tool Access Program (TAP) at the SVTC […]
SVTC provides analytical services
Tags: AFM, analysis, EELS, FIB, IC, materials, MEMS, SEM, SIMS, TEM
Posted in fab, FPD, IC, MEMS, Product, PV, Service | Comments Off on SVTC provides analytical services
Thursday, March 5th, 2009
Amkor Technology announced today that it will introduce its next generation package on package (PoP) platform at the IMAPS Device Packaging Conference next week in Scottsdale, AZ. Again begging the question, “Who needs TSV?” this this new PoP platform uses Amkor’s proprietary through mold via (TMV)(TM) interconnect technology to get to 3D IC stacking. {Blog […]
Amkor’s TMV PoP will go to 0.3mm
Tags: 3D, IC, memory, PoP, TMV, TSV, WLP
Posted in fab, IC, Product, Service | Comments Off on Amkor’s TMV PoP will go to 0.3mm
Wednesday, March 4th, 2009
Electron beam direct write (EBDW) lithography is well-developed and has better potential resolution than any other method, but writing speeds did not keep up with Moore’s law after about 1980, leading to abysmal throughput (measured in hours per wafer). Now, the e-Beam Initiative focusing on design for e-beam manufacturing (DFEB) and multibeam writing using MEMS […]
eBeam Initiative and tool competition
Tags: 22nm, 32nm, 45nm, e-beam, EbDW, IC, litho, node
Posted in Equipment, fab, IC, MEMS, Product | Comments Off on eBeam Initiative and tool competition
Tuesday, March 3rd, 2009
IEDM 2008 included the unveiling of Schiltron’s (Session 34.6) revolutionary 3-D high density Flash technology that combines the smallest TFTs to date in series strings of up to 64 cells. The unique architecture effectively removes pass disturbs allowing large worst-case string currents and resulting in thinner tunnel oxides, lower erase voltages, and higher endurance than […]
IEDM2008 DG-TFT SONOS shown
Tags: 3D, 45nm, CMOS, Flash, IC, memory, NAND, SONOS, TFT
Posted in fab, IC | Comments Off on IEDM2008 DG-TFT SONOS shown
Thursday, February 26th, 2009
One year after this editor covered an SPIE panel on reference metrology and summarized the situation as “there is no more noise; there is only signal,” another lively panel at SPIE this evening discussed the need for not just precise but accurate critical dimension (CD) measurements in advanced IC lines. With smaller structures and reduced […]
IC reference metrology: small squirrelly signals
Tags: 2D, 32nm, AFM, bias, CD-SEM, IC, metrology
Posted in Equipment, fab, IC, Product | Comments Off on IC reference metrology: small squirrelly signals
Monday, February 23rd, 2009
JEOL will install the first e-beam direct-write-on-wafer (EBDW) lithography tool to support nanotechnology development in the Pacific Northwest when the University of Washington takes delivery of a JBX-6300FS tool. The system will be installed in the state-funded Washington Technology Center Microfabrication Lab. Funding for the tool acquisition was provided through a state-supported STAR researchers’ grant […]
JEOL EBDW litho in MEMS prototyping lab
Tags: 32nm, 45nm, EbDR, IC, lithography, MEMS, NIL, node, R&D
Posted in Equipment, fab, MEMS, Product | Comments Off on JEOL EBDW litho in MEMS prototyping lab