Tuesday, July 7th, 2009
Applied Materials has extended physical vapor deposition (PVD) technology to be able to coat the sidewalls of 22nm node structures. “It’s been validated, it’s been shipped, and it’s been qualified in pilot lines for both logic and memory,” asserted Marek Radko, Applied Materials’ BEOL GPM Manager, in an exclusive interview with BetaSights. Separately, the company […]
New PVD for both nano and micro
Tags: 22nm, 32nm, barrier, barrier/seed, Cu, damascene, fab, IC, metal, PVD, seed, TSV, UBM
Posted in Equipment, fab, IC, Product | Comments Off on New PVD for both nano and micro
Thursday, April 2nd, 2009
The control of complex interdependencies is critical for the successful manufacturing of nanometer-scale ICs. Every aspect of every unit process step in the line must be ever more tightly controlled to ensure that 45nm and 32nm node chips can be made with good yield. To serve the market, Novellus continues to announce new integrated surface-treatment […]
Novellus 32nm dielectric barriers
Tags: 32nm, 45nm, 65nm, barrier, CVD, IC, low-k, PECVD, SiCN
Posted in Equipment, fab, IC, Product | Comments Off on Novellus 32nm dielectric barriers