Monday, November 29th, 2010
Applied Materials lauches Centris platform for AdvantEdge MESA etch chambers, claiming 180 wph throughput, 0.8nm CD, and 30% lower CoO. Also releases new ultra HDP Silvia etch chamber for Centura, claiming $10 per wafer TSV etch.
Applied Materials launches new HVM etch platform
Tags: 32nm, Applied Materials, CD, Centris, Centura, control, CoO, DP, etch, gas, HDP, HVM, IC, litho, MFC, OEM, Silvia, TSV, uniformity
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Wednesday, March 11th, 2009
Nanometrics today announced the release of Version 2.0 of its NanoCD Suite of solutions for optical critical dimension (OCD) metrology, just one year after V1 was released. OCD (a.k.a., “scatterometry”) has been used to successfully control fab processes for many years. The major known limitation of the technique is model building from reference metrology data, […]
Nanometrics next NanoCD Suite for OCD
Tags: 22nm, 32nm, CD, CMP, etch, fab, finFET, high-k, HK, IC, metal-gate, metrology, MG, OCD
Posted in Equipment, fab, IC, Product | Comments Off on Nanometrics next NanoCD Suite for OCD