Posts Tagged ‘Cu’
Friday, January 7th, 2011
IEDM 2010 showed evolutions of NAND Flash with ALD IPD and ECC to 1Xnm node processing, and embedded-DRAM (eDRAM) capacitor stacks in porous low-k, meaning mainstream memory technologies will continue to dominate commercial volumes.
NAND Flash and DRAM evolutions
Tags: 12nm, 16nm, 22nm, 25nm, 2Xnm, 32nm, 3Xnm, ALD, COB, Cu, DRAM, eDRAM, Flash, HfO2, IC, IEDM, Intel, Micron, MLC, MPS, NAND, PCM, Renesas, ReRAM, Samsung, SARP, W
Posted in Equipment, fab, IC, Material, Product | Comments Off on NAND Flash and DRAM evolutions
Tuesday, December 14th, 2010
Through-silicon vias (TSV) by IBM and Semtech for ADC/DSP solutions use copper and deep-trench capacitors for RF applications; IEDM 2010 papers show TSV in active chips progressing slowly.
TSV interposers by IBM/Semtech for ADC/DSP
Tags: 65nm, 90nm, ADC/DSP, CEA-Leti, Cu, FPGA, IBM, IC, interposer, MLM, Semtech, Si, TSMC, TSV, W
Posted in fab, IC, Material, Product, Service | Comments Off on TSV interposers by IBM/Semtech for ADC/DSP
Monday, November 8th, 2010
Xilinx 28nm FPGA Virtex-7 uses TSMC 65nm multi-level-metal (MLM) and through-silicon-via (TSV) Si-interposer for 2M gate and ARM-core integration product family.
Xilinx uses TSV+MLM interposers for 28nm FPGA
Tags: 22nm, 28nm, 32nm, ARM, ASSID, Cu, FPGA, IC, IEEE, integration, interposer, IZM, MLM, Si, SoC, TSMC, TSV, Xilinx, yield
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Thursday, September 23rd, 2010
TSV for 3D integration of heterogeneous ICs used in interposers first, as shown at SEMICON/West, IMAPS, IEDM and companies like ASE, Alchimer, Suss, EVG, Novellus, Vertical Circuits, and IBM.
TSV ready in interposers at OTAPs
Tags: 3D, ASE, Cu, ECD, etch, IC, IEDM, IMAPS, Novellus, OTAP, PVD, Qualcomm, TSV
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on TSV ready in interposers at OTAPs
Wednesday, June 16th, 2010
Intel shows vertical integration pays off with air-gaps through manufacturing cost reduction in low-k dielectrics for 32nm and 22nm node IC interconnects.
Intel shows vertical integration pays off with air-gaps
Tags: 22nm, 32nm, air-gap, Cu, IC, integration, interconnect, logic, low-k, materials
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Monday, March 22nd, 2010
The upcoming Spring Materials Research Society (MRS) Meeting in San Francisco will feature a separate “Nanocontact and Nanointerconnects Workshop” to explore the biggest secret about the smallest devices: for the near-term there’s nothing better than standard metal. The workshop will address both theoretical and experimental approaches to formation, carrier transport, and reliability, and so will […]
How to connect to nano devices
Tags: 22nm, CMOS, CNT, Cu, FET, FPD, IC, memory, MEMS, nano, PV, R&D
Posted in Equipment, fab, FPD, IC, Material, MEMS, PV | Comments Off on How to connect to nano devices
Tuesday, December 1st, 2009
Based on proven hardware sub-systems from previous models, Applied Materials has released a new chemical-mechanical planarization (CMP) tool that processes two 300mm diameter wafers simultaneously on each of two plattens. Initially targeting copper interconnect formation for memory ICs, the Reflexion GT tool has passed betasite tests at multiple customers, and reportedly provides 60% higher throughput […]
Applied Materials CMP tool dances the two-step
Tags: 4Xnm, CMP, cost, Cu, DRAM, fab, IC, OEM, slurry, tool, W
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Friday, August 21st, 2009
James Quinn, CEO of Replisaurus, has been very busy executing for the last few years to bring his vision of a new metallization technology to the IC fab industry. Targeting the formation of Cu interconnects for advanced packaging applications, Quinn has assembled a great team to work with CEA-Leti and other industrial partners on a […]
Replisaurus ready to roll with Leti
Tags: Cu, deposition, ECD, IC, interconnect, Leti, MEMS, metal, packaging
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Replisaurus ready to roll with Leti
Tuesday, July 7th, 2009
Applied Materials has extended physical vapor deposition (PVD) technology to be able to coat the sidewalls of 22nm node structures. “It’s been validated, it’s been shipped, and it’s been qualified in pilot lines for both logic and memory,” asserted Marek Radko, Applied Materials’ BEOL GPM Manager, in an exclusive interview with BetaSights. Separately, the company […]
New PVD for both nano and micro
Tags: 22nm, 32nm, barrier, barrier/seed, Cu, damascene, fab, IC, metal, PVD, seed, TSV, UBM
Posted in Equipment, fab, IC, Product | Comments Off on New PVD for both nano and micro
Friday, May 1st, 2009
Leaving California for the first time, the 12th annual IEEE International Interconnect Technology Conference (IITC) will take place in Sapporo, Japan, June 1-3. With lithographic shrinks in 2D dimensions slowing, interconnects between chips in packages and in 3D stacks will be the driver for increased density and functionality in ICs. Thus, the more than 80 […]
IITC in Sapporo for 22nm interconnects and 3D
Tags: 22nm, 32nm, 3D, 45nm, 65nm, contact, Cu, dielectric, IC, integration, low-k, TSV, W
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on IITC in Sapporo for 22nm interconnects and 3D