Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Advanced Lithography is All about Materials
Tuesday, September 14th, 2010
E-beam Initiative adds four members and starts on Design for E-beam (DFEB) for mask makng for ICs to reduce mask costs at 22nm and below.
E-beam Initiative speeds mask making
Tags: 193i, 22nm, 32nm, BACUS, CDU, D2S, DFM, e-Beam Initiative, EbDW, IC, Intel, litho, mask, node, SPIE, SRAF
Posted in Equipment, fab, IC, Material, Product, Service | Comments Off on E-beam Initiative speeds mask making
Tuesday, April 21st, 2009
IMEC has successfully transferred memory variability aware modeling (MemoryVAM), the first EDA tool for statistical memory analysis, to Samsung Electronics. The tool predicts yield loss of embedded SRAMs caused by the process variations of deep-submicron IC technologies. This may be the first proven design-for-manufacturing (DFM) tool to provide statistical analysis across degrees of abstraction from […]
IMEC eSRAM DFM tool to Samsung
Tags: 32nm, 45nm, DFM, EDA, eSRAM, IC, process, SRAM, variation, yield
Posted in fab, IC, Product, Service | Comments Off on IMEC eSRAM DFM tool to Samsung
