IEDM 2010 showed evolutions of NAND Flash with ALD IPD and ECC to 1Xnm node processing, and embedded-DRAM (eDRAM) capacitor stacks in porous low-k, meaning mainstream memory technologies will continue to dominate commercial volumes.

HP and Hynix JVA for ReRAM chips, based on HP titania memristor as covered by BetaSights April 2010, with R&D fab in Korea to start work on integration on 300mm silicon wafers for 2013 IC chips

Based on proven hardware sub-systems from previous models, Applied Materials has released a new chemical-mechanical planarization (CMP) tool that processes two 300mm diameter wafers simultaneously on each of two plattens. Initially targeting copper interconnect formation for memory ICs, the Reflexion GT tool has passed betasite tests at multiple customers, and reportedly provides 60% higher throughput […]

The SPIE Europe Microtechnologies For the New Millennium congress has new partners this year, with the involvement of GMM, the Society of Microelectronics, Micro and Precision Engineering and the magazine mst|news as Cooperating Organisations for the first time. The event will be held at the Congress Centre Maritim Hotel in Dresden, Germany, 4-6 May 2009. […]

At SEMI’s SMC yesterday, Sung Wook Park, executive vice president and general manager of Hynix Semiconductor, provided a keynote address on the materials needs for mainstream memory chips over the next decade. DRAMs will likely turn into STTRAMs, and NAND Flash will probably be replaced by ReRAM (Ref: Ed’s Threads 080505). Combinatorial materials R&D company […]

On January 6, 2009, ASM International and SAFC Hitech (a business segment within SAFC, a member of the Sigma-Aldrich Group) announced that they have entered into a certified manufacturer and partnership agreement for ALD precursors for barium- and strontium-based high-k insulators.  The agreement includes certification criteria, a license to certain ASM ALD patents, and a […]