Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Advanced Lithography is All about Materials
Monday, April 5th, 2010
The 2010 SPIE Advanced Lithography conference is where we first get glimpses of the future of nano-scale patterning technology for manufacturing. Sometimes, many fuzzy blobs come into focus as a picture in a single moment, and Yan Borodovsky of Intel showed how to do 22nm node litho the day before SPIE officially started. At both […]
Litho limit seen as 1D patterns
Tags: 22nm, DSA, EbDW, EUV, HDD, HVM, litho, NGL, NIL
Posted in Equipment, fab, IC, Material, MEMS | Comments Off on Litho limit seen as 1D patterns
