Wednesday, February 25th, 2009
Applied Materials’ Technical Symposium at SPIE 2009 featured a panel discussion on next generation lithography (NGL) that was moderated by the company’s Ken MacWIlliams. The outstanding panelists were C. Grant Willson (UT-Austin), Burn Lin (TSMC), Jongwook Kye (AMD), Steve Radigan (Sandisk), and Milind Weling (Cadence). As would be expected from this panel, EUV steppers were […]
IC next-generation litho needs all possible tricks
Tags: DP, EbDR, i193, litho, NIL, stepper
Posted in Equipment, fab, IC, Material, MEMS, Product, PV, Service | Comments Off on IC next-generation litho needs all possible tricks
Monday, February 23rd, 2009
JEOL will install the first e-beam direct-write-on-wafer (EBDW) lithography tool to support nanotechnology development in the Pacific Northwest when the University of Washington takes delivery of a JBX-6300FS tool. The system will be installed in the state-funded Washington Technology Center Microfabrication Lab. Funding for the tool acquisition was provided through a state-supported STAR researchers’ grant […]
JEOL EBDW litho in MEMS prototyping lab
Tags: 32nm, 45nm, EbDR, IC, lithography, MEMS, NIL, node, R&D
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Monday, January 26th, 2009
CEA/Leti, along with e-beam lithography supplier Vistec, and new design and software company D2S, recently announced a collaboration focused on refining and validating advanced design-for-e-beam (DFEB) solutions for 45nm and 32nm nodes. Over the next 12 months, Leti will manufacture test chips using a combination of D2S’ design and software capabilities along with the latest […]
CEA/Leti, Vistec, and D2S push EbDW
Tags: 32nm, 45nm, EbDR, IC, lithography, node, SoC
Posted in Equipment, fab, IC, Product, Service | Comments Off on CEA/Leti, Vistec, and D2S push EbDW