Friday, January 22nd, 2010
The IEEE’s International Electron Devices Meeting (IEDM) is still the place to see the latest micro- and nano-electronics research targeting commercial markets. On December 8, 2009, French researchers from Leti/Minatec showed “3D sequential CMOS integration” as <600°C processing of PFETs using a (110) orientation FDSOI layer that was transferred on top of NFETs made using […]
Leti shows 3D IC PFETs over NFETs
Tags: 22nm, 3D, dual-gate, epitaxy, FDSOI, FET, finFET, HfO2, HK, IC, NiSi, R&D, RSD, selective epi, SiGe, SPE, stack, TSV
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Friday, April 10th, 2009
The Materials Research Society (MRS) Bulletin for April 2009 covers some of the newest engineering work for the growth of large and pure electronic crystals. In this week before the annual MRS Spring Meeting in San Francisco, this issue of the monthly MRS members magazine provides an excellent overview of the latest technologies used to […]
Crystal growers and complex crucibles
Tags: crystal, defect, epitaxy, GaAs, Ge, growth, IC, InP, PV, Si, wafer
Posted in fab, IC, Material, MEMS, Product, PV | Comments Off on Crystal growers and complex crucibles