Monday, March 22nd, 2010
The upcoming Spring Materials Research Society (MRS) Meeting in San Francisco will feature a separate “Nanocontact and Nanointerconnects Workshop” to explore the biggest secret about the smallest devices: for the near-term there’s nothing better than standard metal. The workshop will address both theoretical and experimental approaches to formation, carrier transport, and reliability, and so will […]
How to connect to nano devices
Tags: 22nm, CMOS, CNT, Cu, FET, FPD, IC, memory, MEMS, nano, PV, R&D
Posted in Equipment, fab, FPD, IC, Material, MEMS, PV | Comments Off on How to connect to nano devices
Friday, January 22nd, 2010
The IEEE’s International Electron Devices Meeting (IEDM) is still the place to see the latest micro- and nano-electronics research targeting commercial markets. On December 8, 2009, French researchers from Leti/Minatec showed “3D sequential CMOS integration” as <600°C processing of PFETs using a (110) orientation FDSOI layer that was transferred on top of NFETs made using […]
Leti shows 3D IC PFETs over NFETs
Tags: 22nm, 3D, dual-gate, epitaxy, FDSOI, FET, finFET, HfO2, HK, IC, NiSi, R&D, RSD, selective epi, SiGe, SPE, stack, TSV
Posted in fab, IC | Comments Off on Leti shows 3D IC PFETs over NFETs