IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.

The IEEE’s International Electron Devices Meeting (IEDM) is still the place to see the latest micro- and nano-electronics research targeting commercial markets. On December 8, 2009, French researchers from Leti/Minatec showed “3D sequential CMOS integration” as <600°C processing of PFETs using a (110) orientation FDSOI layer that was transferred on top of NFETs made using […]

Founded in 1984 with Flemish government support, IMEC has reached 25 years. To celebrate the organization’s accomplishments, BetaSights joined other industry media outlets attending a research review event in beautiful Leuven, Belgium. From 1999 to 2009 has been the “phase of international breakthrough” as described by current president Luc Van den hove. Working with OEMs […]

Nanometrics today announced the release of Version 2.0 of its NanoCD Suite of solutions for optical critical dimension (OCD) metrology, just one year after V1 was released. OCD (a.k.a., “scatterometry”) has been used to successfully control fab processes for many years. The major known limitation of the technique is model building from reference metrology data, […]