Posts Tagged ‘logic’
Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Advanced Lithography is All about Materials
Tuesday, September 7th, 2010
HP and Hynix JVA for ReRAM chips, based on HP titania memristor as covered by BetaSights April 2010, with R&D fab in Korea to start work on integration on 300mm silicon wafers for 2013 IC chips
HP with Hynix for ReRAM in 2013
Tags: 16nm, 22nm, AI, DRAM, etch, Flash, HDD, IC, litho, logic, memory, memristor, NAND, PVD, R&D, ReRAM, SSDP
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Wednesday, August 25th, 2010
For 32nm and 22nm node ICs, Applied Materials’ FCVD and Novellus Systems’ CFD technologies provide gapfill, sidewall spacers, and conformal oxides for logic and NAND, plus SSDP litho.
IC industry contracts new VDs: CFD and FCVD
Tags: 22nm, 32nm, ALD, CVD, dielectric, fab, HDP-CVD, IC, integration, litho, logic, materials, memory, NAND, node, PECVD, SOG, SSDP
Posted in Equipment, fab, IC, Material, Product | Comments Off on IC industry contracts new VDs: CFD and FCVD
Wednesday, June 16th, 2010
Intel shows vertical integration pays off with air-gaps through manufacturing cost reduction in low-k dielectrics for 32nm and 22nm node IC interconnects.
Intel shows vertical integration pays off with air-gaps
Tags: 22nm, 32nm, air-gap, Cu, IC, integration, interconnect, logic, low-k, materials
Posted in fab, IC, Material, Product | Comments Off on Intel shows vertical integration pays off with air-gaps
Thursday, April 22nd, 2010
HP Labs in Palo Alto has been leading the development of the “memristor,” and researchers there have finally discovered the underlying mechanism for the formation of devices that can function as memory cells, logic circuits, and potentially even real artificial intelligence (AI)! Disclosing these results in his plenary speech to the attendees at the Nanocontacts […]
Memristor manufacturing for memory, logic, and AI
Tags: 16nm, 22nm, AI, logic, materials, memory, memristor, nano, R&D, ReRAM
Posted in Equipment, fab, IC, Material | Comments Off on Memristor manufacturing for memory, logic, and AI
Friday, October 9th, 2009
Founded in 1984 with Flemish government support, IMEC has reached 25 years. To celebrate the organization’s accomplishments, BetaSights joined other industry media outlets attending a research review event in beautiful Leuven, Belgium. From 1999 to 2009 has been the “phase of international breakthrough” as described by current president Luc Van den hove. Working with OEMs […]
IMEC betas for TSMC HVM
Tags: 193nm, 22nm, 300mm, 32nm, beta, EUV, finFET, Flash, HB-LED, IC, logic, MEMS, PV, SiGe, TANOS
Posted in Equipment, fab, IC, Material, MEMS, Product, PV, Service | Comments Off on IMEC betas for TSMC HVM
Tuesday, January 27th, 2009
After the 1st “act” of the story of Intel as a memory chip company founded in 1969, the 2nd act really started in 1985 with the decision to bet the company on the 80386 microprocessor according to Richard S. Tedlow, Harvard Business School professor and residential scholar of the Computer History Museum, in a lecture […]
Shaw to lead 3rd act at Intel
Tags: 90nm, fab, high-k, HKMG, IC, logic, memory, microprocessor, R&D, SoC
Posted in fab, IC | Comments Off on Shaw to lead 3rd act at Intel