IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.

HP and Hynix JVA for ReRAM chips, based on HP titania memristor as covered by BetaSights April 2010, with R&D fab in Korea to start work on integration on 300mm silicon wafers for 2013 IC chips

For 32nm and 22nm node ICs, Applied Materials’ FCVD and Novellus Systems’ CFD technologies provide gapfill, sidewall spacers, and conformal oxides for logic and NAND, plus SSDP litho.

HP Labs in Palo Alto has been leading the development of the “memristor,” and researchers there have finally discovered the underlying mechanism for the formation of devices that can function as memory cells, logic circuits, and potentially even real artificial intelligence (AI)! Disclosing these results in his plenary speech to the attendees at the Nanocontacts […]

The upcoming Spring Materials Research Society (MRS) Meeting in San Francisco will feature a separate “Nanocontact and Nanointerconnects Workshop” to explore the biggest secret about the smallest devices: for the near-term there’s nothing better than standard metal. The workshop will address both theoretical and experimental approaches to formation, carrier transport, and reliability, and so will […]

The Materials Research Society (MRS) Spring Meeting in San Francisco is so huge, this year attracting a record of over 5,000 attendees, that strategy is needed to try to see any representative sample of the event. To provide in-depth information about new materials technologies, new symposia have been added over the years such that there […]

The BetaBlog of March 5th was originally titled “Amkor chooses TMV not TSV for PoP” and Amkor’s stalwart vice president of business development Lee Smith contacted BetaSights to correct the impression that Amkor may have chosen to not work on TSV. I’d intended the original title to be somewhat playful; since TSV is chip-level while […]

Amkor Technology announced today that it will introduce its next generation package on package (PoP) platform at the IMAPS Device Packaging Conference next week in Scottsdale, AZ. Again begging the question, “Who needs TSV?” this this new PoP platform uses Amkor’s proprietary through mold via (TMV)(TM) interconnect technology to get to 3D IC stacking. {Blog […]

IEDM 2008 included the unveiling of Schiltron’s (Session 34.6) revolutionary 3-D high density Flash technology that combines the smallest TFTs to date in series strings of up to 64 cells. The unique architecture effectively removes pass disturbs allowing large worst-case string currents and resulting in thinner tunnel oxides, lower erase voltages, and higher endurance than […]

Toshiba claims the prototype of a new Ferroelectric Random Access Memory (FRAM) cell sized at 15F2 acheives read and write speed of 1.6-GB/s using a 130nm node CMOS process. The company will show details of this high bandwidth 128Mb non-volative RAM technology at the International Solid-State Circuits Conference 2009 (ISSCC 2009; Session 27.5) in San […]