Tuesday, December 21st, 2010
Graphene—the 2D hexagonal lattice of carbon—has been under investigation as a new material for electronics applications due to it’s high mobility and other unique properties. At IEDM this year, an entire session (#23) was devoted to showcasing graphene devices, and to sharing the latest processing tricks to grow and (sometimes) transfer the single-atomic-layer of carbon […]
Graphene devices and processing shown at IEDM
Tags: analog, analogue, backgate, bandgap, gate, GeorgiaTech, GFET, graphene, HfO2, HK, IBM, IC, IEDM, MIT, mixed-signal, mobility, RF, SAIT, SiC, THz
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Friday, January 23rd, 2009
Researchers from Sungkyunkwan University (SKKU) in Korea have found that large graphene films can be formed using CVD over a Ni thin film. The graphene is both strong and stretchy, and at low temperatures the monolayers transferred to SiO2 substrates show electron mobility >3,700 cm2/Vs implying that the quality is as high as mechanically-cleaved graphene. […]
Graphene dreams may be real at SKKU
Tags: CVD, electron, film, graphene, IC, mobility, monolayer
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