This year’s plenary sessions of the SPIE Advanced Lithography Symposium exposed the complexities of patterning ICs in high-volume manufacturing (HVM) at the 22nm node and beyond. Steppers using 193nm ArF immersion (193i) will be extended using double-patterning (DP) schemes, since the extreme-ultra-violet litho (EUVL) infrastructure is again delayed. R&D to support DP integration has led […]

KLA-Tencor recently announced its long awaited 193nm reticle defect inspection tool, the Teron 600. Wafer scanners adopted 193nm exposure wavelength years ago in order to shrink circuit features below the resolution limit set by the previous (248nm) wavelength, roughly 130nm. The photomasks used in those tools, however, continued to be inspected at 257nm, in spite […]

On April 7, 2009, KLA-Tencor introduced the TeraScanXR, the latest version of their TeraScan reticle inspection system, this one intended for 32nm node DUV masks. This new tool, an extension of existing reticle inspection systems, is designed to provide mask manufacturers better sensitivity, lower cost-per-inspection and faster mask dispositioning. Improvements in overall sensitivity in die-to-die […]