Tuesday, December 21st, 2010
Graphene—the 2D hexagonal lattice of carbon—has been under investigation as a new material for electronics applications due to it’s high mobility and other unique properties. At IEDM this year, an entire session (#23) was devoted to showcasing graphene devices, and to sharing the latest processing tricks to grow and (sometimes) transfer the single-atomic-layer of carbon […]
Graphene devices and processing shown at IEDM
Tags: analog, analogue, backgate, bandgap, gate, GeorgiaTech, GFET, graphene, HfO2, HK, IBM, IC, IEDM, MIT, mixed-signal, mobility, RF, SAIT, SiC, THz
Posted in Equipment, fab, IC, Material, Product | Comments Off on Graphene devices and processing shown at IEDM
Monday, October 18th, 2010
IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.
IEDM to show 22nm alt-channels and dual- and tri-gates
Tags: 22nm, analog, CEA/Leti, CMOS, dual-gate, FDSOI, finFET, graphene, IC, IEDM, Infineon, Intel, memory, MEMS, Mittal, ReRAM, RF, SOI, transistor, tri-gate, TSMC
Posted in fab, IC, Material, MEMS, Product, Service | Comments Off on IEDM to show 22nm alt-channels and dual- and tri-gates
Wednesday, February 4th, 2009
Allvia, the first through-silicon via (TSV) foundry, has secured $5 million from private investors in a round of funding to expand manufacturing facilities and to build more capacity. After 3 years of revenue generation from providing vertical interconnects and System-in-Package (SiP) solutions, total investment in the company is now $25 million. With in-house processing equipment, […]
Allvia TSV foundry adding capacity
Tags: 3D, foundry, IC, interconnect, MEMS, package, RF, Service, Si, TSV
Posted in fab, IC, MEMS, Product, Service | Comments Off on Allvia TSV foundry adding capacity