Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Advanced Lithography is All about Materials
Friday, January 7th, 2011
IEDM 2010 showed evolutions of NAND Flash with ALD IPD and ECC to 1Xnm node processing, and embedded-DRAM (eDRAM) capacitor stacks in porous low-k, meaning mainstream memory technologies will continue to dominate commercial volumes.
NAND Flash and DRAM evolutions
Tags: 12nm, 16nm, 22nm, 25nm, 2Xnm, 32nm, 3Xnm, ALD, COB, Cu, DRAM, eDRAM, Flash, HfO2, IC, IEDM, Intel, Micron, MLC, MPS, NAND, PCM, Renesas, ReRAM, Samsung, SARP, W
Posted in Equipment, fab, IC, Material, Product | Comments Off on NAND Flash and DRAM evolutions
Thursday, January 8th, 2009
Samsung has launched a new press release for “super-thin LED monitors” (http://www.businesswire.com/news/home/20090107006252/en) that are really LCDs with LED backlight units (BLU). The company’s new P2370L is just 16.5mm thick and uses white LED instead of cold cathode fluorescent lamp (CCFL) illumination. Compared to CCLF units, LED BLUs consume 30% less energy, are constructed without mercury, […]
Samsung LED backlighting proliferates
Tags: backlight, BLU, FPD, InGaN, LCD, LED, lighting, MOCVD, Osram, Samsung
Posted in Equipment, fab, FPD, Material | Comments Off on Samsung LED backlighting proliferates
