Tuesday, December 21st, 2010
Graphene—the 2D hexagonal lattice of carbon—has been under investigation as a new material for electronics applications due to it’s high mobility and other unique properties. At IEDM this year, an entire session (#23) was devoted to showcasing graphene devices, and to sharing the latest processing tricks to grow and (sometimes) transfer the single-atomic-layer of carbon […]
Graphene devices and processing shown at IEDM
Tags: analog, analogue, backgate, bandgap, gate, GeorgiaTech, GFET, graphene, HfO2, HK, IBM, IC, IEDM, MIT, mixed-signal, mobility, RF, SAIT, SiC, THz
Posted in Equipment, fab, IC, Material, Product | Comments Off on Graphene devices and processing shown at IEDM
Tuesday, April 14th, 2009
sp3 Diamond Technologies – the supplier of diamond film products, equipment, and services – today announced it is taking orders for 50mm and 100mm silicon on diamond (SOD) wafers for use as Gallium Nitride (GaN) substrates. Having worked with Nitronix on the GaN, sp3 Diamond Technologies uses combinations of thin-film depositions, wafer thinning, and layer […]
Silicon on Diamond 100mm wafers for GaN
Tags: 100mm, epi, GaN, HEMT, IC, LDMOS, materials, MOCVD, Si, SiC, SOD, thin-film, wafer
Posted in fab, IC, Material, Product | Comments Off on Silicon on Diamond 100mm wafers for GaN