IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.

German and French teams are combining EUR 14.5m investment into development of strained-silicon on insulator (sSOI) technology under the DEvice and CIrcuit performance boosted through SIlicon material Fabrication (DECISIF) program. The work will combine original research results from Research Center Juelich and Leti/Soitec to try to lower costs and defect-densities in the creation of 300mm […]