Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
Posted in Equipment, fab, IC, Material, MEMS, Product, Service | Comments Off on Advanced Lithography is All about Materials
Tuesday, December 14th, 2010
Through-silicon vias (TSV) by IBM and Semtech for ADC/DSP solutions use copper and deep-trench capacitors for RF applications; IEDM 2010 papers show TSV in active chips progressing slowly.
TSV interposers by IBM/Semtech for ADC/DSP
Tags: 65nm, 90nm, ADC/DSP, CEA-Leti, Cu, FPGA, IBM, IC, interposer, MLM, Semtech, Si, TSMC, TSV, W
Posted in fab, IC, Material, Product, Service | Comments Off on TSV interposers by IBM/Semtech for ADC/DSP
Monday, November 8th, 2010
Xilinx 28nm FPGA Virtex-7 uses TSMC 65nm multi-level-metal (MLM) and through-silicon-via (TSV) Si-interposer for 2M gate and ARM-core integration product family.
Xilinx uses TSV+MLM interposers for 28nm FPGA
Tags: 22nm, 28nm, 32nm, ARM, ASSID, Cu, FPGA, IC, IEEE, integration, interposer, IZM, MLM, Si, SoC, TSMC, TSV, Xilinx, yield
Posted in fab, IC, Product, Service | Comments Off on Xilinx uses TSV+MLM interposers for 28nm FPGA
Monday, October 18th, 2010
IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.
IEDM to show 22nm alt-channels and dual- and tri-gates
Tags: 22nm, analog, CEA/Leti, CMOS, dual-gate, FDSOI, finFET, graphene, IC, IEDM, Infineon, Intel, memory, MEMS, Mittal, ReRAM, RF, SOI, transistor, tri-gate, TSMC
Posted in fab, IC, Material, MEMS, Product, Service | Comments Off on IEDM to show 22nm alt-channels and dual- and tri-gates
