Tuesday, April 14th, 2009
sp3 Diamond Technologies – the supplier of diamond film products, equipment, and services – today announced it is taking orders for 50mm and 100mm silicon on diamond (SOD) wafers for use as Gallium Nitride (GaN) substrates. Having worked with Nitronix on the GaN, sp3 Diamond Technologies uses combinations of thin-film depositions, wafer thinning, and layer […]
Silicon on Diamond 100mm wafers for GaN
Tags: 100mm, epi, GaN, HEMT, IC, LDMOS, materials, MOCVD, Si, SiC, SOD, thin-film, wafer
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Friday, April 10th, 2009
The Materials Research Society (MRS) Bulletin for April 2009 covers some of the newest engineering work for the growth of large and pure electronic crystals. In this week before the annual MRS Spring Meeting in San Francisco, this issue of the monthly MRS members magazine provides an excellent overview of the latest technologies used to […]
Crystal growers and complex crucibles
Tags: crystal, defect, epitaxy, GaAs, Ge, growth, IC, InP, PV, Si, wafer
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Thursday, March 26th, 2009
German and French teams are combining EUR 14.5m investment into development of strained-silicon on insulator (sSOI) technology under the DEvice and CIrcuit performance boosted through SIlicon material Fabrication (DECISIF) program. The work will combine original research results from Research Center Juelich and Leti/Soitec to try to lower costs and defect-densities in the creation of 300mm […]
DECISIF start on strained silicon
Tags: 22nm, 32nm, 45nm, CVD, EDA, epi, IC, implant, integration, Material, Si, SiGe, SOI, sSOI, strain, wafer
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